Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
20 V, 550 mA dual P-channel Trench MOSFET
Mosfet Array 2 P-Channel (Dual) 20V 550mA 330mW Surface Mount SOT-666
Mosfet Array 2 P-Channel (Dual) 20V 550mA 330mW Surface Mount SOT-666
Mosfet Array 2 P-Channel (Dual) 20V 550mA 330mW Surface Mount SOT-666
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 846223-PMDT670UPE,11
Series: Automotive, AEC-Q101, TrenchMOS™
Features: Mosfet Array
Package: Reel - TR
Family Name: PMDT670
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Quantity per package: 4000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 26 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: 1727-1334-1, 568-10767-1-ND, 1727-1334-2, 568-10767-6, 568-10767-2-ND, 568-10767-2, PMDT670UPE,115-ND, 1727-1334-6, 568-10767-6-ND, 568-10767-1, 934065734115, PMDT670UPE115
MOSFET 2P-CH 20V 0.55A SOT666 Product overview: PMDT670UPE,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.55A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PMDT670UPE,115 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 20V 0.55A SOT666
MOSFET, P CHANNEL, DUAL, 20V, 550MA, SOT666; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:550mA; On Resistance Rds(on):0.67ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
| Nexperia B.V. | Rochester Electronics | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMDT670UPE,115 | PMDT670UPE,115 | 1727-1334-2-ND | 846223-PMDT670UPE,115 | 289-PMDT670UPE,115 | PMDT670UPE,115 | 75T8012 |
| Product Name | 20 V, 550 mA dual P-channel Trench MOSFET | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDT670UPE,115 | 20V 0.55A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, Dual, 20V, 550Ma, Sot666; Transistor Polarity Nexperia | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | -20 volts | 20 volts | |||||
| IDSS | -550000 milliamps | 550 milliamps | |||||
| VGS(off) | 8 volts | ||||||
| PD | 330 milliwatts | 1.09 milliwatts |
