Nexperia B.V. 20 V, complementary N/P-channel Trench MOSFET PMCXB900UEZ

Description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables
  • 20 V, complementary N/P-channel Trench MOSFET - PMCXB900UEZ - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - 1727-PMCXB900UEZTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMCXB900UEZCT-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMCXB900UEZDKR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMCXB900UEZ - 1089502-PMCXB900UEZ - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - PMCXB900UEZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMCXB900UEZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, complementary N/P-channel Trench MOSFET - PMCXB900UEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UEZ
20 V, complementary N/P-channel Trench MOSFET PMCXB900UEZ
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Very low threshold voltage for portable applications: VGS(th) = 0.7 V
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • Level shifter
  • Power management in battery-driven portables
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-PMCXB900UEZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMCXB900UEZTR-ND
FET, MOSFET Arrays 1727-PMCXB900UEZTR-ND
Mosfet Array N and P-Channel Complementary 20V 600mA, 500mA 265mW Surface Mount DFN1010B-6

Mosfet Array N and P-Channel Complementary 20V 600mA, 500mA 265mW Surface Mount DFN1010B-6

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMCXB900UEZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMCXB900UEZCT-ND
FET, MOSFET Arrays 1727-PMCXB900UEZCT-ND
Mosfet Array N and P-Channel Complementary 20V 600mA, 500mA 265mW Surface Mount DFN1010B-6

Mosfet Array N and P-Channel Complementary 20V 600mA, 500mA 265mW Surface Mount DFN1010B-6

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMCXB900UEZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMCXB900UEZDKR-ND
FET, MOSFET Arrays 1727-PMCXB900UEZDKR-ND
Mosfet Array N and P-Channel Complementary 20V 600mA, 500mA 265mW Surface Mount DFN1010B-6

Mosfet Array N and P-Channel Complementary 20V 600mA, 500mA 265mW Surface Mount DFN1010B-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMCXB900UEZ - 1089502-PMCXB900UEZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMCXB900UEZ
1089502-PMCXB900UEZ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMCXB900UEZ 1089502-PMCXB900UEZ
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089502-PMCXB900UEZ Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-DFN (1.1x1) Maximum Power Dissipation: 265mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 600mA, 500mA Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 0.7nC @ 4.5V Max Input Capacitance: 21.3pF @ 10V Maximum Rds On at Id,Vgs: 620 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089502-PMCXB900UEZ
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DFN (1.1x1)
Maximum Power Dissipation: 265mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 600mA, 500mA
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 0.7nC @ 4.5V
Max Input Capacitance: 21.3pF @ 10V
Maximum Rds On at Id,Vgs: 620 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
FET, MOSFET Arrays - PMCXB900UEZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
PMCXB900UEZ
FET, MOSFET Arrays PMCXB900UEZ
MOSFET N/P-CH 20V 600/500MA 6DFN

MOSFET N/P-CH 20V 600/500MA 6DFN

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMCXB900UEZ
MOSFET PMCXB900UEZ
MOSFET 20 V, complementary N/P-channel Trench

MOSFET 20 V, complementary N/P-channel Trench

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMCXB900UEZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMCXB900UEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMCXB900UEZ
MOSFET N/P-CH 20V 0.6A 6DFN

MOSFET N/P-CH 20V 0.6A 6DFN

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMCXB900UEZ 1727-PMCXB900UEZTR-ND 1089502-PMCXB900UEZ PMCXB900UEZ PMCXB900UEZ PMCXB900UEZ
Product Name 20 V, complementary N/P-channel Trench MOSFET FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMCXB900UEZ FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; P-Channel P-Channel P-Channel; N and P-Channel Complementary
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts 20 volts 20 volts
IDSS 600 milliamps 600 milliamps
VGS(off) 0.7000 volts
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