Nexperia B.V. 12 V, P-channel Trench MOSFET PMCM4401VPEZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.78 × 0.78 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits
  • 12 V, P-channel Trench MOSFET - PMCM4401VPEZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-2687-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2687-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2687-1-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMCM4401VPEZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P-Ch, -12V, -3.9A, Wlcsp-4; Transistor Polarity Nexperia - 82Y7166 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single FETs, MOSFETs - PMCM4401VPEZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.78 × 0.78 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
12 V, P-channel Trench MOSFET - PMCM4401VPEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
12 V, P-channel Trench MOSFET
PMCM4401VPEZ
12 V, P-channel Trench MOSFET PMCM4401VPEZ
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.78 × 0.78 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Ultra small package: 0.78 × 0.78 × 0.35 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Battery switch
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
P-Channel 12 V MOSFET Transistor
278-PMCM4401VPEZ
P-Channel 12 V MOSFET Transistor 278-PMCM4401VPEZ
PMCM4401VPE - 12 V, P-channel Trench MOSFET Product overview: PMCM4401VPEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 12 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMCM4401VPEZ can be used for catalog matching and distributor lookup.

PMCM4401VPE - 12 V, P-channel Trench MOSFET Product overview: PMCM4401VPEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 12 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMCM4401VPEZ can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2687-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2687-2-ND
Single FETs, MOSFETs 1727-2687-2-ND
P-Channel 12V 3.9A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (0.78x0.78)

P-Channel 12V 3.9A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (0.78x0.78)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2687-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2687-6-ND
Single FETs, MOSFETs 1727-2687-6-ND
P-Channel 12V 3.9A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (0.78x0.78)

P-Channel 12V 3.9A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (0.78x0.78)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2687-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2687-1-ND
Single FETs, MOSFETs 1727-2687-1-ND
P-Channel 12V 3.9A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (0.78x0.78)

P-Channel 12V 3.9A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (0.78x0.78)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMCM4401VPEZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMCM4401VPEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMCM4401VPEZ
MOSFET P-CH 12V 3.9A 4WLCSP

MOSFET P-CH 12V 3.9A 4WLCSP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMCM4401VPEZ
MOSFET PMCM4401VPEZ
MOSFET 12V P-Channel Trench MOSFET

MOSFET 12V P-Channel Trench MOSFET

Buy Now Datasheet
Mosfet, P-Ch, -12V, -3.9A, Wlcsp-4; Transistor Polarity Nexperia - 82Y7166 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -12V, -3.9A, Wlcsp-4; Transistor Polarity Nexperia
82Y7166
Mosfet, P-Ch, -12V, -3.9A, Wlcsp-4; Transistor Polarity Nexperia 82Y7166
MOSFET, P-CH, -12V, -3.9A, WLCSP-4; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.9A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power RoHS Compliant: Yes

MOSFET, P-CH, -12V, -3.9A, WLCSP-4; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.9A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - PMCM4401VPEZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMCM4401VPEZ
Single FETs, MOSFETs PMCM4401VPEZ
MOSFET P-CH 12V 3.9A 4WLCSP

MOSFET P-CH 12V 3.9A 4WLCSP

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMCM4401VPEZ 278-PMCM4401VPEZ 1727-2687-2-ND PMCM4401VPEZ PMCM4401VPEZ 82Y7166 PMCM4401VPEZ
Product Name 12 V, P-channel Trench MOSFET P-Channel 12 V MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, P-Ch, -12V, -3.9A, Wlcsp-4; Transistor Polarity Nexperia Single FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -12 volts 12 volts
IDSS -4900 milliamps -3900 milliamps 3900 milliamps
VGS(off) -0.6000 volts
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