Nexperia B.V. TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB70EN,115 PMDPB70EN,115

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089513-PMDPB70EN,11 5 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DFN2020-6 Maximum Power Dissipation: 510mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.5A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 4.5nC @ 10V Max Input Capacitance: 130pF @ 15V Maximum Rds On at Id,Vgs: 57 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089513-PMDPB70EN,11 5 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DFN2020-6 Maximum Power Dissipation: 510mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.5A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 4.5nC @ 10V Max Input Capacitance: 130pF @ 15V Maximum Rds On at Id,Vgs: 57 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB70EN,115 - 1089513-PMDPB70EN,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB70EN,115
1089513-PMDPB70EN,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB70EN,115 1089513-PMDPB70EN,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1089513-PMDPB70EN,11 5 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DFN2020-6 Maximum Power Dissipation: 510mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.5A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 4.5nC @ 10V Max Input Capacitance: 130pF @ 15V Maximum Rds On at Id,Vgs: 57 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089513-PMDPB70EN,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DFN2020-6
Maximum Power Dissipation: 510mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.5A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 4.5nC @ 10V
Max Input Capacitance: 130pF @ 15V
Maximum Rds On at Id,Vgs: 57 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
FET, MOSFET Arrays - 568-10761-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
568-10761-2-ND
FET, MOSFET Arrays 568-10761-2-ND
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 510mW Surface Mount 6-HUSON (2x2)

Mosfet Array 2 N-Channel (Dual) 30V 3.5A 510mW Surface Mount 6-HUSON (2x2)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 1089513-PMDPB70EN,115 568-10761-2-ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB70EN,115 FET, MOSFET Arrays
Polarity N-Channel
V(BR)DSS 30 volts
PD 510 milliwatts
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