Nexperia B.V. 60 V, N-channel Trench MOSFET PMN55ENEAH

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
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60 V, N-channel Trench MOSFET - PMN55ENEAH - Nexperia B.V.
Nijmegen, Netherlands
60 V, N-channel Trench MOSFET
PMN55ENEAH
60 V, N-channel Trench MOSFET PMN55ENEAH
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Extended temperature range Tj = 175 °C
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMN55ENEAH
Product Name 60 V, N-channel Trench MOSFET
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
IDSS 3600 milliamps
VGS(off) 1.7 volts
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