Nexperia B.V. 30 V, N-channel Trench MOSFET PMCB60XNYL

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Ultra small package: 1 × 0.6 × 0.2 mm Trench MOSFET technology Applications Battery switch High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMCB60XNYL - Nexperia B.V.
    Nexperia B.V.
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Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Ultra small package: 1 × 0.6 × 0.2 mm Trench MOSFET technology Applications Battery switch High-speed line driver Low-side load switch Switching circuits
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30 V, N-channel Trench MOSFET - PMCB60XNYL - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMCB60XNYL
30 V, N-channel Trench MOSFET PMCB60XNYL
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Ultra small package: 1 × 0.6 × 0.2 mm Trench MOSFET technology Applications Battery switch High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Ultra small package: 1 × 0.6 × 0.2 mm
  • Trench MOSFET technology

Applications

  • Battery switch
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMCB60XNYL
Product Name 30 V, N-channel Trench MOSFET
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 4500 milliamps
VGS(off) 0.8000 volts
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