Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Mosfet Array N and P-Channel 20V 725mA, 500mA 280mW Surface Mount 6-TSSOP
Mosfet Array N and P-Channel 20V 725mA, 500mA 280mW Surface Mount 6-TSSOP
Mosfet Array N and P-Channel 20V 725mA, 500mA 280mW Surface Mount 6-TSSOP
PMGD290UCEA - 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET TSSOP 6-Pin Product overview: PMGD290UCEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20 V, 500 mA, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, 500 mA, TSSOP, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PMGD290UCEAX can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089677-PMGD290UCEAX
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSSOP
Maximum Power Dissipation: 280mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 725mA, 500mA
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 0.68nC @ 4.5V
Max Input Capacitance: 83pF @ 10V
Maximum Rds On at Id,Vgs: 380 mOhm @ 500mA, 4.5V
Alternative Parts (Cross-Reference): DMC2004DWK-7; PMGD290UCEA; Si1553CDL-T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
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MOSFET, N & P-CH, 20V, 0.725A, TSSOP; Transistor Polarity:Complementa
MOSFET N/P-CH 20V 6TSSOP
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMGD290UCEAX | 1727-1354-1-ND | 289-PMGD290UCEAX | 1089677-PMGD290UCEAX | PMGD290UCEAX | PMGD290UCEAX | 12X8769 | PMGD290UCEAX |
| Product Name | 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET | FET, MOSFET Arrays | P-Channel 20 V 500 mA TSSOP MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMGD290UCEAX | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N & P-Ch, 20V, 0.725A, Tssop; Transistor Polarity Nexperia | FET, MOSFET Arrays |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| IDSS | -500000 milliamps | 725 milliamps | 725 milliamps | |||||
| VGS(off) | 8 volts | |||||||
| PD | 280 milliwatts | 280 milliwatts |
