The Nexperia PMDPB55XP is a dual P-channel Trench MOSFET designed for efficient switching applications. It operates with a maximum drain-source voltage of -20 V and can handle a continuous drain current of -4.5 A. The on-state resistance is low at 0.055 Ohm, which contributes to reduced power loss during operation. This MOSFET is housed in a compact DFN2020-6 package, measuring 2 x 2 x 0.65 mm, making it suitable for space-constrained designs. It features an exposed drain pad for improved thermal dissipation. The device is RoHS compliant, ensuring it meets environmental standards. Applications include charging switches for portable devices, DC/DC converters, and power management in battery-operated systems.
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET 2P-CH 20V 3.4A 6HUSON Product overview: PMDPB55XP,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PMDPB55XP,115 can be used for catalog matching and distributor lookup.
Mosfet Array 2 P-Channel (Dual) 20V 3.4A 490mW Surface Mount 6-HUSON (2x2)
Mosfet Array 2 P-Channel (Dual) 20V 3.4A 490mW Surface Mount 6-HUSON (2x2)
Mosfet Array 2 P-Channel (Dual) 20V 3.4A 490mW Surface Mount 6-HUSON (2x2)
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089509-PMDPB55XP,11
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DFN2020-6
Maximum Power Dissipation: 490mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.4A
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 25nC @ 5V
Max Input Capacitance: 785pF @ 10V
Maximum Rds On at Id,Vgs: 70 mOhm @ 3.4A, 4.5V
Alternative Parts (Cross-Reference): PMDPB55XP;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
MOSFET 2P-CH 20V 3.4A 6HUSON
MOSFET Transistor, Dual P Channel, -4.5 A, -20 V, 0.055 ohm, -4.5 V, -650 mV RoHS Compliant: Yes
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMDPB55XP,115 | 289-PMDPB55XP,115 | 1727-PMDPB55XP,115TR-ND | 1089509-PMDPB55XP,115 | PMDPB55XP,115 | 43W6154 |
| Product Name | 20 V, dual P-channel Trench MOSFET | 20V 3.4A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB55XP,115 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, Dual P Channel, -4.5 A, -20 V, 0.055 Ohm, -4.5 V, -650 Mv Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||
| Package Type | SOT1118 SOT1118 | Tape & Reel (TR) | 6-UFDFN Exposed Pad | SOT3; DFN2020-6 | TO-3 | |
| Polarity | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts |
