NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
PNP complement: PHPT60610PY
Features and benefits
Applications
Bipolar (BJT) Transistor NPN 60V 10A 140MHz 1.5W Surface Mount LFPAK56, Power-SO8
Bipolar (BJT) Transistor NPN 60V 10A 140MHz 1.5W Surface Mount LFPAK56, Power-SO8
Bipolar (BJT) Transistor NPN 60V 10A 140MHz 1.5W Surface Mount LFPAK56, Power-SO8
PHPT60610NY - 60 V, 10 A NPN high power bipolar transistor SOIC 4-Pin Product overview: PHPT60610NYX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 10 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 10 A, SOIC, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PHPT60610NYX can be used for catalog matching and distributor lookup.
PHPT6061 Power Bipolar Transistor, 10A, 60V, NPN, MO-235, SOT669
Win Source Part Number: 1111817-PHPT60610NYX
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 360mV @ 1A, 10A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 240 @ 500mA, 2V
Frequency - Transition: 140MHz
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Temperature Range - Operating: 175°C (TJ)
Alternative Parts (Cross-Reference): 934068583115;
Fake Threat In the Open Market: 84 pct.
MSL Level: Vendor Undefined
REACH Status: Vendor Undefined
Mfr: Nexperia USA Inc.
Other Names: 2156-PHPT60610NYX-17
TRANS NPN 60V 10A LFPAK56 PWRSO8
Bipolar (BJT) Single Transistor, NPN, 60 V, 140 MHz, 1.5 W, 10 A, 50 RoHS Compliant: Yes
Bipolar Transistors - BJT 10A NPN High Power Bipolar Transistor
TRANS NPN 60V 10A LFPAK56 PWRSO8
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power Bipolar Transistors | Transistors | Bipolar RF Transistors | Power MOSFET | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PHPT60610NYX | 1727-PHPT60610NYXTR-ND | 276-PHPT60610NYX | PHPT60610NYX | 1111817-PHPT60610NYX | PHPT60610NYX | 68Y7792 | PHPT60610NYX | PHPT60610NYX |
| Product Name | 60 V, 10 A NPN high power bipolar transistor | Single Bipolar Transistors | 60 V 10 A SOIC Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Single Bipolar Transistors | Bipolar (Bjt) Single Transistor, Npn, 60 V, 140 Mhz, 1.5 W, 10 A, 50 Rohs Compliant Nexperia | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| VCEO | 60 volts | 60 volts | 60 volts | ||||||
| IC(max) | 10 milliamps | 10000 milliamps | 10000 milliamps | 10000 milliamps | |||||
| PD | 1.5 milliwatts | ||||||||
| TJ | 175 C (347 F) | 175 C (347 F) | 175 C (347 F) | ||||||
| Package Type | SOT669 SOT669 | SC-100, SOT-669 | SOT669 | SOT3 | SC-100, SOT-669 | TO-3 | AEC-Q100 |
