Nexperia B.V. 30 V, N-channel Trench MOSFET PMN40ENEX

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

• Trench MOSFET technology
• Logic-level compatible
• Very fast switching
• Enhanced power dissipation capability of 1240 mW
• ElectroStatic Discharge (ESD) protection > 1 kV HBM

Applications

• LED driver
• Power management
• Low-side loadswitch
• Switching circuits

PMN40ENE - 30 V, N-channel Trench MOSFET TSOP 6-Pin Product overview: PMN40ENEX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMN40ENEX can be used for catalog matching and distributor lookup.

N-Channel 30V 5.7A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP

N-Channel 30V 5.7A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP

N-Channel 30V 5.7A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP

Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089704-PMN40ENEX
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SC-74, SOT-457
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.7A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 294pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 38 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Application Field: Used in Computers & Computer Peripherals, Portable Devices, Power Management, Industrial