Nexperia B.V. 20 V, 2 A P-channel Trench MOSFET PMG85XP,115

P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

• Low threshold voltage
• Very fast switching
• Trench MOSFET technology

Applications

• Relay driver
• High-speed line driver
• High-side load switch
• Switching circuits

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089672-PMG85XP,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 375mW (Ta), 2.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSSOP
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A (Tj)
Gate-Source Threshold Voltage: 1.15V @ 250μA
Max Gate Charge: 7.2nC @ 4.5V
Max Input Capacitance: 560pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 115 mOhm @ 2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

P-Channel 20V 2A (Tj) 375mW (Ta), 2.4W (Tc) Surface Mount 6-TSSOP

P-Channel 20V 2A (Tj) 375mW (Ta), 2.4W (Tc) Surface Mount 6-TSSOP

P-Channel 20V 2A (Tj) 375mW (Ta), 2.4W (Tc) Surface Mount 6-TSSOP