Nexperia B.V. 12 V, P-channel Trench MOSFET PMCM6501VPEZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits
  • 12 V, P-channel Trench MOSFET - PMCM6501VPEZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-2689-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2689-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-2689-6-ND - DigiKey
    DigiKey
  • PMCM6501VPEZ - Rochester Electronics
    Rochester Electronics
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
12 V, P-channel Trench MOSFET - PMCM6501VPEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
12 V, P-channel Trench MOSFET
PMCM6501VPEZ
12 V, P-channel Trench MOSFET PMCM6501VPEZ
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Ultra small package: 0.98 × 1.48 × 0.35 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Battery switch
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-2689-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2689-1-ND
Single FETs, MOSFETs 1727-2689-1-ND
P-Channel 12V 6.2A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x0.98)

P-Channel 12V 6.2A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x0.98)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2689-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2689-2-ND
Single FETs, MOSFETs 1727-2689-2-ND
P-Channel 12V 6.2A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x0.98)

P-Channel 12V 6.2A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x0.98)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2689-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2689-6-ND
Single FETs, MOSFETs 1727-2689-6-ND
P-Channel 12V 6.2A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x0.98)

P-Channel 12V 6.2A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x0.98)

Buy Now Datasheet
- PMCM6501VPEZ - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PMCM6501VPEZ
PMCM6501VPEZ
Small Signal Field-Effect Transistor

Small Signal Field-Effect Transistor

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMCM6501VPEZ
MOSFET PMCM6501VPEZ
MOSFET 12V P-Channel Trench MOSFET

MOSFET 12V P-Channel Trench MOSFET

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Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMCM6501VPEZ 1727-2689-1-ND PMCM6501VPEZ PMCM6501VPEZ
Product Name 12 V, P-channel Trench MOSFET Single FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -12 volts
IDSS -8200 milliamps
VGS(off) -0.6000 volts
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