P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 30V 6.1A 6TSOP
N-Channel 30V 6.1A (Ta) 560mW (Ta), 6.25mW (Tc) Surface Mount 6-TSOP
MOSFET N-CH 30V 6.1A 6TSOP
MOSFET 30 V, N-channel Trench MOSFET
MOSFET N-CH 30V 6.1A 6TSOP
| Nexperia B.V. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMN25ENEH | 1727-PMN25ENEHDKR-ND | PMN25ENEH | PMN25ENEH |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 30 volts | |||
| IDSS | 8000 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 560 milliwatts |
