Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMDXB950UPE - 20 V, dual P-channel Trench MOSFET DFN 6-Pin Product overview: PMDXB950UPEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 20 V, DFN. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20 V, DFN, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PMDXB950UPEZ can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 20V 0.5A 6DFN
Mosfet Array 2 P-Channel (Dual) 20V 500mA 265mW Surface Mount DFN1010B-6
Mosfet Array 2 P-Channel (Dual) 20V 500mA 265mW Surface Mount DFN1010B-6
Mosfet Array 2 P-Channel (Dual) 20V 500mA 265mW Surface Mount DFN1010B-6
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089521-PMDXB950UPEZ
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DFN1010B-6
Maximum Power Dissipation: 265mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 500mA
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 2.1nC @ 4.5V
Max Input Capacitance: 43pF @ 10V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET 2P-CH 20V 0.5A 6DFN
Dual MOSFET, Dual P Channel, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV RoHS Compliant: Yes
MOSFET 20 V, dual P-channel Trench MOSFET
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMDXB950UPEZ | 289-PMDXB950UPEZ | PMDXB950UPEZ | 1727-2279-1-ND | 1089521-PMDXB950UPEZ | PMDXB950UPEZ | 68Y7812 | PMDXB950UPEZ |
| Product Name | 20 V, dual P-channel Trench MOSFET | P-Channel Dual 20 V DFN MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDXB950UPEZ | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet, Dual P Channel, -500 Ma, -20 V, 1.02 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia | MOSFET |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | -20 volts | 20 volts | 20 volts | |||||
| IDSS | -500 milliamps | 500 milliamps | ||||||
| VGS(off) | -0.7000 volts |
