Nexperia B.V. 20 V, N-channel Trench MOSFET PMH600UNEH

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 20 V, N-channel Trench MOSFET - PMH600UNEH - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMH600UNEHTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMH600UNEHDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMH600UNEHCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMH600UNEH - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia - 99AC9465 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Single FETs, MOSFETs - PMH600UNEH - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package measuring 0.62 x 0.62 x 0.37 mm using Trench MOSFET technology. The device has a drain-source voltage rating of 20 V, a gate-source voltage range of ±8 V, and a continuous drain current of 800 mA at 25 °C with a 1 cm² drain pad. The drain-source on-state resistance is 470 mΩ at V_GS = 4.5 V and I_D = 600 mA. ElectroStatic Discharge (ESD) protection exceeds 1 kV HBM. Applications include relay driver, high-speed line driver, low-side load switch, and switching circuits.

Datasheet Summary
Powered by GS/AI

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package measuring 0.62 x 0.62 x 0.37 mm using Trench MOSFET technology. The device has a drain-source voltage rating of 20 V, a gate-source voltage range of ±8 V, and a continuous drain current of 800 mA at 25 °C with a 1 cm² drain pad. The drain-source on-state resistance is 470 mΩ at V_GS = 4.5 V and I_D = 600 mA. ElectroStatic Discharge (ESD) protection exceeds 1 kV HBM. Applications include relay driver, high-speed line driver, low-side load switch, and switching circuits.

Suppliers

Company
Product
Description
Supplier Links
20 V, N-channel Trench MOSFET - PMH600UNEH - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, N-channel Trench MOSFET
PMH600UNEH
20 V, N-channel Trench MOSFET PMH600UNEH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM
  • Drain-source on-state resistance RDSon = 470 mΩ

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMH600UNEHTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH600UNEHTR-ND
Single FETs, MOSFETs 1727-PMH600UNEHTR-ND
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMH600UNEHDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH600UNEHDKR-ND
Single FETs, MOSFETs 1727-PMH600UNEHDKR-ND
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMH600UNEHCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH600UNEHCT-ND
Single FETs, MOSFETs 1727-PMH600UNEHCT-ND
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMH600UNEH - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMH600UNEH
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMH600UNEH
MOSFET N-CH 20V 800MA DFN0606-3

MOSFET N-CH 20V 800MA DFN0606-3

Supplier's Site
Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia - 99AC9465 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia
99AC9465
Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia 99AC9465
MOSFET, N-CH, 20V, 0.8A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:800mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.47ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes

MOSFET, N-CH, 20V, 0.8A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:800mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.47ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - PMH600UNEH - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMH600UNEH
Single FETs, MOSFETs PMH600UNEH
MOSFET N-CH 20V 800MA DFN0606-3

MOSFET N-CH 20V 800MA DFN0606-3

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMH600UNEH
MOSFET PMH600UNEH
MOSFET 20 V, N-channel Trench MOSFET

MOSFET 20 V, N-channel Trench MOSFET

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMH600UNEH 1727-PMH600UNEHTR-ND PMH600UNEH 99AC9465 PMH600UNEH PMH600UNEH
Product Name 20 V, N-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia Single FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts 20 volts
IDSS 800000 milliamps 800 milliamps 800 milliamps
VGS(off) 8 volts
PD 370 milliwatts 370 milliwatts
Unlock Full Specs
to access all available technical data