Nexperia B.V. 20 V, N-channel Trench MOSFET PMH600UNEH

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 20 V, N-channel Trench MOSFET - PMH600UNEH - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - PMH600UNEH - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 1727-PMH600UNEHDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMH600UNEHTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMH600UNEHCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMH600UNEH - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia - 99AC9465 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, N-channel Trench MOSFET - PMH600UNEH - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, N-channel Trench MOSFET
PMH600UNEH
20 V, N-channel Trench MOSFET PMH600UNEH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM
  • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - PMH600UNEH - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMH600UNEH
Single FETs, MOSFETs PMH600UNEH
MOSFET N-CH 20V 800MA DFN0606-3

MOSFET N-CH 20V 800MA DFN0606-3

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMH600UNEHDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH600UNEHDKR-ND
Single FETs, MOSFETs 1727-PMH600UNEHDKR-ND
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMH600UNEHTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH600UNEHTR-ND
Single FETs, MOSFETs 1727-PMH600UNEHTR-ND
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMH600UNEHCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH600UNEHCT-ND
Single FETs, MOSFETs 1727-PMH600UNEHCT-ND
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMH600UNEH
MOSFET PMH600UNEH
MOSFET 20 V, N-channel Trench MOSFET

MOSFET 20 V, N-channel Trench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMH600UNEH - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMH600UNEH
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMH600UNEH
MOSFET N-CH 20V 800MA DFN0606-3

MOSFET N-CH 20V 800MA DFN0606-3

Supplier's Site
Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia - 99AC9465 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia
99AC9465
Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia 99AC9465
MOSFET, N-CH, 20V, 0.8A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:800mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.47ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes

MOSFET, N-CH, 20V, 0.8A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:800mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.47ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMH600UNEH PMH600UNEH 1727-PMH600UNEHDKR-ND PMH600UNEH PMH600UNEH 99AC9465
Product Name 20 V, N-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia
Polarity N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts 20 volts
IDSS 800 milliamps 800 milliamps 800 milliamps
VGS(off) 0.7000 volts
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