N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3
MOSFET N-CH 20V 800MA DFN0606-3
MOSFET 20 V, N-channel Trench MOSFET
MOSFET N-CH 20V 800MA DFN0606-3
MOSFET, N-CH, 20V, 0.8A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:800mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.47ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMH600UNEH | 1727-PMH600UNEHDKR-ND | PMH600UNEH | PMH600UNEH | PMH600UNEH | 99AC9465 |
| Product Name | 20 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 800 milliamps | 800 milliamps | 800 milliamps | |||
| VGS(off) | 0.7000 volts |
