Nexperia B.V. 20 V, N-channel Trench MOSFET PMH600UNEH

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 20 V, N-channel Trench MOSFET - PMH600UNEH - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMH600UNEHTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMH600UNEHDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMH600UNEHCT-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMH600UNEH - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single FETs, MOSFETs - PMH600UNEH - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia - 99AC9465 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, N-channel Trench MOSFET - PMH600UNEH - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, N-channel Trench MOSFET
PMH600UNEH
20 V, N-channel Trench MOSFET PMH600UNEH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM
  • Drain-source on-state resistance RDSon = 470 mΩ

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMH600UNEHTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH600UNEHTR-ND
Single FETs, MOSFETs 1727-PMH600UNEHTR-ND
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMH600UNEHDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH600UNEHDKR-ND
Single FETs, MOSFETs 1727-PMH600UNEHDKR-ND
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMH600UNEHCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH600UNEHCT-ND
Single FETs, MOSFETs 1727-PMH600UNEHCT-ND
N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

N-Channel 20V 800mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMH600UNEH - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMH600UNEH
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMH600UNEH
MOSFET N-CH 20V 800MA DFN0606-3

MOSFET N-CH 20V 800MA DFN0606-3

Supplier's Site
Single FETs, MOSFETs - PMH600UNEH - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMH600UNEH
Single FETs, MOSFETs PMH600UNEH
MOSFET N-CH 20V 800MA DFN0606-3

MOSFET N-CH 20V 800MA DFN0606-3

Supplier's Site Datasheet
Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia - 99AC9465 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia
99AC9465
Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia 99AC9465
MOSFET, N-CH, 20V, 0.8A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:800mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.47ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes

MOSFET, N-CH, 20V, 0.8A, DFN0606; Transistor Polarity:N Channel; Continuous Drain Current Id:800mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.47ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMH600UNEH
MOSFET PMH600UNEH
MOSFET 20 V, N-channel Trench MOSFET

MOSFET 20 V, N-channel Trench MOSFET

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMH600UNEH 1727-PMH600UNEHTR-ND PMH600UNEH PMH600UNEH 99AC9465 PMH600UNEH
Product Name 20 V, N-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 20V, 0.8A, Dfn0606; Transistor Polarity Nexperia MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts 20 volts
IDSS 800000 milliamps 800 milliamps 800 milliamps
VGS(off) 8 volts
PD 370 milliwatts 370 milliwatts
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