Nexperia B.V. TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDXB600UNE PMDXB600UNE

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089519-PMDXB600UNE
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DFN (1.1x1)
Maximum Power Dissipation: 265mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 600mA
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 0.7nC @ 4.5V
Max Input Capacitance: 21.3pF @ 10V
Maximum Rds On at Id,Vgs: 620 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 20V 0.6A 6DFN Product overview: PMDXB600UNE from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PMDXB600UNE can be used for catalog matching and distributor lookup.