Nexperia B.V. 20 V, dual N-channel Trench MOSFET PMDXB290UNEZ

Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 20 V, dual N-channel Trench MOSFET - PMDXB290UNEZ - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - PMDXB290UNEZ - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • FET, MOSFET Arrays - 1727-PMDXB290UNEZCT-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDXB290UNEZTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDXB290UNEZDKR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, dual N-channel Trench MOSFET - PMDXB290UNEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, dual N-channel Trench MOSFET
PMDXB290UNEZ
20 V, dual N-channel Trench MOSFET PMDXB290UNEZ
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 470 mΩ Applications Relay driver High-speed line driver Low-side load switch Switching circuits

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • Exposed drain pad for excellent thermal conduction
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM
  • Drain-source on-state resistance RDSon = 470 mΩ

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
FET, MOSFET Arrays - PMDXB290UNEZ - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
PMDXB290UNEZ
FET, MOSFET Arrays PMDXB290UNEZ
SMALL SIGNAL MOSFETS FOR PORTABL

SMALL SIGNAL MOSFETS FOR PORTABL

Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-PMDXB290UNEZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDXB290UNEZCT-ND
FET, MOSFET Arrays 1727-PMDXB290UNEZCT-ND
MOSFET 2N-CH 20V 0.93A 6DFN

MOSFET 2N-CH 20V 0.93A 6DFN

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDXB290UNEZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDXB290UNEZTR-ND
FET, MOSFET Arrays 1727-PMDXB290UNEZTR-ND
MOSFET 2N-CH 20V 0.93A 6DFN

MOSFET 2N-CH 20V 0.93A 6DFN

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDXB290UNEZDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDXB290UNEZDKR-ND
FET, MOSFET Arrays 1727-PMDXB290UNEZDKR-ND
MOSFET 2N-CH 20V 0.93A 6DFN

MOSFET 2N-CH 20V 0.93A 6DFN

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. ODG (Origin Data Global) DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMDXB290UNEZ PMDXB290UNEZ 1727-PMDXB290UNEZCT-ND
Product Name 20 V, dual N-channel Trench MOSFET FET, MOSFET Arrays FET, MOSFET Arrays
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts 20 volts
IDSS 3500 milliamps 930 milliamps
VGS(off) 0.7000 volts
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