Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package measuring 1.1 mm × 1.0 mm × 0.37 mm using Trench MOSFET technology. The device has a drain-source voltage rating of 20 V, a gate-source voltage rating of ±8 V, and a continuous drain current of 930 mA at 25 °C. Drain-source on-state resistance is 270 mΩ to 320 mΩ at V_GS = 4.5 V and I_D = 1.2 A. Electrostatic discharge protection exceeds 2 kV HBM. The part meets IEC 60134 for limiting values and is suitable for relay driver, high-speed line driver, low-side load switch, and switching circuit applications.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET 2N-CH 20V 0.93A 6DFN
MOSFET 2N-CH 20V 0.93A 6DFN
MOSFET 2N-CH 20V 0.93A 6DFN
SMALL SIGNAL MOSFETS FOR PORTABL
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMDXB290UNEZ | 1727-PMDXB290UNEZTR-ND | PMDXB290UNEZ |
| Product Name | 20 V, dual N-channel Trench MOSFET | FET, MOSFET Arrays | FET, MOSFET Arrays |
| MOSFET Operating Mode | Enhancement | ||
| V(BR)DSS | 20 volts | 20 volts | |
| IDSS | 930000 milliamps | 930 milliamps | |
| VGS(off) | 8 volts | ||
| PD | 280 milliwatts |
