PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT61002NYCLH.
Features and benefits
Applications
Bipolar (BJT) Transistor PNP 100V 2A 125MHz 25W Surface Mount LFPAK56, Power-SO8
Bipolar (BJT) Transistor PNP 100V 2A 125MHz 25W Surface Mount LFPAK56, Power-SO8
Bipolar (BJT) Transistor PNP 100V 2A 125MHz 25W Surface Mount LFPAK56, Power-SO8
PHPT61002PYCLH - 100 V, 2 A PNP high power bipolar transistor SOIC 4-Pin Product overview: PHPT61002PYCLHX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 V, 2 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 100 V, 2 A, SOIC, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PHPT61002PYCLHX can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325630-PHPT61002PYC
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,500
Mounting: Surface Mount
Power - Max: 25 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 10V
Frequency - Transition: 125MHz
Supplier Device Package: LFPAK56, Power-SO8
Temperature Range - Operating: 175°C (TJ)
Case / Package: SC-100, SOT-669
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Other Part Number: PHPT61002PYCLHX-ND,2
Base Product Number: PHPT61002
RoHS Status: ROHS3 Compliant
TRANS PNP 100V 2A LFPAK56 PWRSO8
Bipolar Transistors - BJT Bipolar Discretes SOT669
TRANSISTOR, PNP, -100V, -2A, SOT-669; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:125MHz; Power Dissipation Pd:25W; DC Collector Current:-2A; DC Current Gain hFE:20hFE; Transistor Case RoHS Compliant: Yes
TRANS PNP 100V 2A LFPAK56 PWRSO8
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power Bipolar Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | PHPT61002PYCLHX | 1727-7492-6-ND | 276-PHPT61002PYCLHX | 1325630-PHPT61002PYCLHX | PHPT61002PYCLHX | PHPT61002PYCLHX | 65AC3931 | PHPT61002PYCLHX |
| Product Name | 100 V, 2 A PNP high power bipolar transistor | Single Bipolar Transistors | 100 V 2 A SOIC Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | Transistor, Pnp, -100V, -2A, Sot-669; Transistor Polarity Nexperia | Single Bipolar Transistors |
| VCEO | -100 volts | 100 volts | 100 volts | |||||
| IC(max) | -2 milliamps | 2000 milliamps | 2000 milliamps | 2000 milliamps | ||||
| PD | 1.25 milliwatts | |||||||
| TJ | 175 C (347 F) | 175 C (347 F) | 175 C (347 F) | |||||
| Package Type | SOT669 SOT669 | SC-100, SOT-669 | SOT3; SC-100, SOT-669 | LFPAK56, Power-SO8 | TO-3 | SC-100, SOT-669 |
