N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 surface-mounted plastic package using Trench MOSFET technology, rated for 60 V drain-source voltage and 3.6 A continuous drain current at 25 °C with a drain-source on-state resistance of 46 to 60 mΩ at 10 V gate-source voltage. The device supports an extended junction temperature range up to 175 °C and offers ESD protection exceeding 2 kV HBM (class H2).
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 3.6A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 60V 3.6A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 60V 3.6A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
MOSFET, N-CH, 60V, 3.6A, TSOP ROHS COMPLIANT: YES
PMN37ENE/SOT457/SC-7
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMN37ENEX | 1727-PMN37ENEXTR-ND | 26AK2756 | PMN37ENEX |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 3.6A, Tsop Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 60 volts | |||
| IDSS | 3600 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 667 milliwatts |
