Dual P-channel enhancement mode MOSFET in a leadless, ultra-thin HUSON6 package measuring 2 x 2 x 0.65 mm with an exposed drain pad for enhanced thermal conduction. Per transistor, it has a drain-source voltage rating of -30 V, a gate-source voltage range of -12 V to 12 V, and a continuous drain current of -2.9 A at -4.5 V gate-source voltage and 25°C junction temperature. The drain-source on-state resistance is 70 mΩ at -4.5 V gate-source voltage and -2.9 A drain current. The device supports a maximum junction temperature of 150°C and a total power dissipation of 490 mW under standard PCB mounting. Applications include power management in portable devices, DC/DC conversion, and small brushless DC motor drive control.
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089515-PMDPB70XP,11
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DFN2020-6
Maximum Power Dissipation: 490mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.9A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.8nC @ 5V
Max Input Capacitance: 680pF @ 15V
Maximum Rds On at Id,Vgs: 87 mOhm @ 2.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Mosfet Array 2 P-Channel (Dual) 30V 2.9A 490mW Surface Mount 6-HUSON (2x2)
Mosfet Array 2 P-Channel (Dual) 30V 2.9A 490mW Surface Mount 6-HUSON (2x2)
Mosfet Array 2 P-Channel (Dual) 30V 2.9A 490mW Surface Mount 6-HUSON (2x2)
Trans MOSFET P-CH 30V 2.9A 6-Pin HUSON EP T/R Product overview: PMDPB70XP,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PMDPB70XP,115 can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 30V 2.9A 6HUSON
MOSFET 2P-CH 30V 2.9A 6HUSON
PMDPB70XP - 30 V, dual P-channel Trench MOSFET
| Nexperia B.V. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMDPB70XP,115 | 1089515-PMDPB70XP,115 | 1727-PMDPB70XP,115TR-ND | 289-PMDPB70XP,115 | PMDPB70XP,115 | PMDPB70XP,115 | 554-PMDPB70XP,115 |
| Product Name | 30 V, dual P-channel Trench MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB70XP,115 | FET, MOSFET Arrays | 30V 2.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | PMDPB70XP - 30 V, dual P-channel Trench MOSFET |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| Package Type | SOT1118 SOT1118 | SOT3; DFN2020-6 | 6-UFDFN Exposed Pad | 6-UFDFN Exposed Pad | 6-UFDFN Exposed Pad | ||
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | -30 volts | |||
| PD | 490 milliwatts | 1170 milliwatts | 1170 milliwatts |
