Nexperia B.V. 30 V, dual P-channel Trench MOSFET PMDPB70XP,115

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

• Very fast switching
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction

Applications

• Charging switch for portable devices
• DC/DC converters
• Small brushless DC motor drive
• Power management in battery-driven portables
• Hard disc and computing power management

Mosfet Array 2 P-Channel (Dual) 30V 2.9A 490mW Surface Mount 6-HUSON (2x2)

Mosfet Array 2 P-Channel (Dual) 30V 2.9A 490mW Surface Mount 6-HUSON (2x2)

Mosfet Array 2 P-Channel (Dual) 30V 2.9A 490mW Surface Mount 6-HUSON (2x2)

MOSFET 2P-CH 30V 2.9A 6HUSON

Trans MOSFET P-CH 30V 2.9A 6-Pin HUSON EP T/R Product overview: PMDPB70XP,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PMDPB70XP,115 can be used for catalog matching and distributor lookup.

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089515-PMDPB70XP,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DFN2020-6
Maximum Power Dissipation: 490mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.9A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.8nC @ 5V
Max Input Capacitance: 680pF @ 15V
Maximum Rds On at Id,Vgs: 87 mOhm @ 2.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance