Nexperia B.V. 20 V, P-channel Trench MOSFET PMN40XPEAAX

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The device has a drain-source voltage rating of -20 V, a gate-source voltage range of -12 V to 12 V, and a continuous drain current of -4.7 A at V_{GS} = -4.5 V and T_{amb} = 25 °C. The on-state resistance is 43 mΩ at the same conditions. It operates with a junction temperature range of -55 °C to 175 °C and is AEC-Q101 qualified with ESD protection exceeding 1000 V HBM (class H1C).