Nexperia B.V. 20 V, P-channel Trench MOSFET PMN40XPEAAX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1000 V HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
  • 20 V, P-channel Trench MOSFET - PMN40XPEAAX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMN40XPEAAXTR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1000 V HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMN40XPEAAX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMN40XPEAAX
20 V, P-channel Trench MOSFET PMN40XPEAAX
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1000 V HBM (class H1C) AEC-Q101 qualified Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Extended temperature range Tj = 175 °C
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 1000 V HBM (class H1C)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMN40XPEAAXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMN40XPEAAXTR-ND
Single FETs, MOSFETs 1727-PMN40XPEAAXTR-ND
SMALL SIGNAL MOSFET FOR AUTOMOTI

SMALL SIGNAL MOSFET FOR AUTOMOTI

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMN40XPEAAX 1727-PMN40XPEAAXTR-ND
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -4700 milliamps
VGS(off) 12 volts
PD 660 milliwatts
Unlock Full Specs
to access all available technical data