PNP high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted plastic package, rated for a collector-emitter voltage of -100 V and a continuous collector current of -2 A, with a peak collector current of -6 A under pulsed conditions. The device offers a collector-emitter saturation resistance of 125 to 200 mΩ at -2 A collector current and -200 mA base current, and supports a maximum junction temperature of 175 °C. Total power dissipation reaches up to 25 W when mounted for junction-to-base heat transfer. The package reduces PCB area compared to DPAK transistors.
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN.
Features and benefits
Applications
Win Source Part Number: 1201803-PHPT61002PYC
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 110mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1.5V
Frequency - Transition: 125MHz
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Temperature Range - Operating: 175°C (TJ)
Alternative Parts (Cross-Reference): PHPT61002PYCX.;
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Nexperia USA Inc.
Other Names: 2156-PHPT61002PYCX-N
Base Product Number: PHPT61002
PHPT61002PYC - 100 V, 2 A PNP high power bipolar transistor SOIC 4-Pin Product overview: PHPT61002PYCX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 V, 2 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 100 V, 2 A, SOIC, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PHPT61002PYCX can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 100V 2A 125MHz 1.25W Surface Mount LFPAK56, Power-SO8
Bipolar (BJT) Transistor PNP 100V 2A 125MHz 1.25W Surface Mount LFPAK56, Power-SO8
Bipolar (BJT) Transistor PNP 100V 2A 125MHz 1.25W Surface Mount LFPAK56, Power-SO8
Bipolar Transistors - BJT NPN High Power BipolarTransistor
NEXPERIA PHPT61002PYC - 100V, 2A
TRANS PNP 100V 2A LFPAK56 PWRSO8
Bipolar (BJT) Single Transistor, PNP, -100 V, 125 MHz, 25 W, -2 A, 20 RoHS Compliant: Yes
| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power Bipolar Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PHPT61002PYCX | 1201803-PHPT61002PYCX | 276-PHPT61002PYCX | 1727-1781-2-ND | PHPT61002PYCX | PHPT61002PYCX | PHPT61002PYCX | 52X6205 |
| Product Name | 100 V, 2 A PNP high power bipolar transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | 100 V 2 A SOIC Bipolar Transistor | Single Bipolar Transistors | Bipolar Transistors - BJT | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar (Bjt) Single Transistor, Pnp, -100 V, 125 Mhz, 25 W, -2 A, 20 Rohs Compliant Nexperia |
| VCEO | -100 volts | 100 volts | 100 volts | |||||
| IC(max) | -2 milliamps | 2000 milliamps | 2000 milliamps | 2000 milliamps | ||||
| PD | 1.25 milliwatts | |||||||
| TJ | 175 C (347 F) | 175 C (347 F) | 175 C (347 F) | |||||
| Package Type | SOT669 SOT669 | SOT3 | SC-100, SOT-669 | SC-100, SOT-669 | TO-3 |
