Nexperia B.V. NPN high-voltage transistor PMBT5550,235

NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Features and benefits

• Low current (max. 300 mA)
• High voltage (max. 140 V)
• AEC-Q101 qualified

Applications

• General purpose

PMBT5550 - NPN high-voltage transistor TO-236 3-Pin Product overview: PMBT5550,235 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PMBT5550,235 can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 140V 300mA 300MHz 250mW Surface Mount TO-236AB

Bipolar (BJT) Transistor NPN 140V 300mA 300MHz 250mW Surface Mount TO-236AB

Bipolar (BJT) Transistor NPN 140V 300mA 300MHz 250mW Surface Mount TO-236AB

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089488-PMBT5550,235
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 300mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 140V
Max Vce (sat): 250mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 60 @ 10mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient