N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 60V 4.2A 6TSOP
N-Channel 60V 4.2A (Ta) 652mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 60V 4.2A (Ta) 652mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 60V 4.2A (Ta) 652mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
MOSFET N-CH 60V 4.2A 6TSOP Product overview: PMN40ENAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMN40ENAX can be used for catalog matching and distributor lookup.
Win Source Part Number: 1107379-PMN40ENAX
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 652mW (Ta), 7.5W (Tc)
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 934660498115,1727-86
Base Product Number: PMN40
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 60V 4.2A 6TSOP
MOSFET, N-CH, 60V, 4.2A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
| Nexperia B.V. | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMN40ENAX | PMN40ENAX | 1727-8682-1-ND | 278-PMN40ENAX | 1107379-PMN40ENAX | PMN40ENAX | PMN40ENAX | 07AH4516 |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V 4.2A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 4.2A, Tsop-6; Transistor Polarity Nexperia |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| IDSS | 4200 milliamps | 4200 milliamps | 4200 milliamps | |||||
| VGS(off) | 1.7 volts |
