The PMDPB58UPE is a dual P-channel Trench MOSFET designed for medium power applications. It features a maximum drain-source voltage of -20 V and a continuous drain current rating of -4.5 A at a gate-source voltage of -4.5 V. The on-state resistance is specified at 58 mOc when conducting 2 A, making it suitable for low-loss switching applications. The device is housed in a compact DFN2020-6 (SOT1118) package, which is leadless and surface-mounted, facilitating efficient thermal management. It also includes 2 kV ESD protection, enhancing its reliability in sensitive applications. The PMDPB58UPE is RoHS compliant, indicating it meets environmental standards for hazardous substances. This MOSFET is ideal for use in relay drivers, high-speed line drivers, and high-side load switching circuits.
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Mosfet Array 2 P-Channel (Dual) 20V 3.6A 515mW Surface Mount 6-HUSON (2x2)
Mosfet Array 2 P-Channel (Dual) 20V 3.6A 515mW Surface Mount 6-HUSON (2x2)
Mosfet Array 2 P-Channel (Dual) 20V 3.6A 515mW Surface Mount 6-HUSON (2x2)
MOSFET 2P-CH 20V 3.6A HUSON6
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089512-PMDPB58UPE,1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DFN2020-6
Maximum Power Dissipation: 515mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.6A
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 9.5nC @ 4.5V
Max Input Capacitance: 804pF @ 10V
Maximum Rds On at Id,Vgs: 67 mOhm @ 2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
MOSFET 2P-CH 20V 3.6A 6HUSON
MOSFET Transistor, Dual P Channel, -4.5 A, -20 V, 0.058 ohm, -4.5 V, -700 mV RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMDPB58UPE,115 | 1727-1237-6-ND | PMDPB58UPE,115 | 1089512-PMDPB58UPE,115 | PMDPB58UPE,115 | 67W0130 |
| Product Name | 20 V dual P-channel Trench MOSFET | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB58UPE,115 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, Dual P Channel, -4.5 A, -20 V, 0.058 Ohm, -4.5 V, -700 Mv Rohs Compliant Nexperia |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | ||
| Package Type | SOT1118 | 6-UFDFN Exposed Pad | 6-UFDFN Exposed Pad | SOT3; DFN2020-6 | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts |
