Nexperia B.V. 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET PMGD290UCEAH

Description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits Automotive applications
  • 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET - PMGD290UCEAH - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - 1727-PMGD290UCEAHTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMGD290UCEAHDKR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMGD290UCEAHCT-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits Automotive applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET - PMGD290UCEAH - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
PMGD290UCEAH
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET PMGD290UCEAH
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits Automotive applications

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Very fast switching
  • Trench MOSFET technology
  • 2 kV ESD protection
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits
  • Automotive applications
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-PMGD290UCEAHTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMGD290UCEAHTR-ND
FET, MOSFET Arrays 1727-PMGD290UCEAHTR-ND
MOS DISCRETES

MOS DISCRETES

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMGD290UCEAHDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMGD290UCEAHDKR-ND
FET, MOSFET Arrays 1727-PMGD290UCEAHDKR-ND
MOS DISCRETES

MOS DISCRETES

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMGD290UCEAHCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMGD290UCEAHCT-ND
FET, MOSFET Arrays 1727-PMGD290UCEAHCT-ND
MOS DISCRETES

MOS DISCRETES

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMGD290UCEAH 1727-PMGD290UCEAHTR-ND
Product Name 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET FET, MOSFET Arrays
MOSFET Operating Mode Enhancement
V(BR)DSS 20 volts
IDSS -500000 milliamps
VGS(off) 8 volts
Unlock Full Specs
to access all available technical data

Similar Products

N-channel enhancement mode vertical D-MOS logic level FET - BSP126,115 - Nexperia B.V.
Nexperia B.V.
N-channel enhancement mode vertical D-MOS logic level FET
BSP126,115
Specs
Package Type SOT223; SOT223 SOT223
View Details
8 suppliers
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56 - BUK7Y2R0-40HX - Nexperia B.V.
Nexperia B.V.
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
BUK7Y2R0-40HX
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 120000 milliamps
View Details
7 suppliers
60 V, P-channel Trench MOSFET - BUK6D120-60PZ - Nexperia B.V.
Nexperia B.V.
60 V, P-channel Trench MOSFET
BUK6D120-60PZ
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS -60 volts
IDSS -8000 milliamps
View Details
2 suppliers
N-channel TrenchMOS standard level FET - BUK761R7-40E,118 - Nexperia B.V.
Nexperia B.V.
N-channel TrenchMOS standard level FET
BUK761R7-40E,118
Specs
Package Type SOT404A SOT404A
Transistor Grade / Operating Range Automotive
View Details
5 suppliers