Nexperia B.V. 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET PMGD290UCEAH

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. The N-channel device has a drain-source voltage rating of 20 V and a continuous drain current of 725 mA at 25 °C, while the P-channel device has a drain-source voltage rating of -20 V and a continuous drain current of -500 mA at 25 °C. On-state resistance is 290 mΩ for the N-channel and 670 mΩ for the P-channel under specified conditions. The device provides 2 kV ESD protection per HBM and is AEC-Q101 qualified. Total power dissipation is 280 mW at 25 °C ambient temperature when mounted on an FR4 PCB with a 1 cm² drain pad.