N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 20V 4.8A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP
N-Channel 20V 4.8A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP
N-Channel 20V 4.8A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP
PMN30UNE - 20 V, N-channel Trench MOSFET TSOP 6-Pin Product overview: PMN30UNEX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMN30UNEX can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089700-PMN30UNEX
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SC-74, SOT-457
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.8A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 558pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 36 mOhm @ 4.8A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
MOSFET N-CH 20V 4.8A 6TSOP
MOSFET N-CH 20V 4.8A 6TSOP
MOSFET PMN30UNE/SC-74/REEL 7" Q1/T1 *
MOSFET, N-CH, 20V, 4.8A, SOT-457-6; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:650mV; Power RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMN30UNEX | 1727-2697-6-ND | 278-PMN30UNEX | 1089700-PMN30UNEX | PMN30UNEX | PMN30UNEX | PMN30UNEX | 82Y7183 |
| Product Name | 20 V, N-channel Trench MOSFET | Single FETs, MOSFETs | N-Channel 20 V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMN30UNEX | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 20V, 4.8A, Sot-457-6; Transistor Polarity Nexperia |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| IDSS | 6000 milliamps | 4800 milliamps | 4800 milliamps | |||||
| VGS(off) | 0.6500 volts |
