N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 6.4A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 30V 6.4A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 30V 6.4A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
MOSFET N-CH 30V 6.4A 6TSOP
MOSFET, N-CH, 30V, 8A, TSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMN25ENEAX | 1727-8661-2-ND | PMN25ENEAX | 03AJ2550 |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 8A, Tsop; Transistor Polarity Nexperia |
| Polarity | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 30 volts | |||
| IDSS | 6400 milliamps | 8000 milliamps | ||
| VGS(off) | 1.5 volts |
