Nexperia B.V. 30 V, N-channel Trench MOSFET PMN25ENEAX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMN25ENEAX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMN25ENEAXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMN25ENEAXTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMN25ENEAX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 30V, 8A, Tsop; Transistor Polarity Nexperia - 03AJ2550 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMN25ENEAX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMN25ENEAX
30 V, N-channel Trench MOSFET PMN25ENEAX
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Extended temperature range Tj = 175 °C
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMN25ENEAXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMN25ENEAXCT-ND
Single FETs, MOSFETs 1727-PMN25ENEAXCT-ND
N-Channel 30V 6.4A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP

N-Channel 30V 6.4A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMN25ENEAXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMN25ENEAXTR-ND
Single FETs, MOSFETs 1727-PMN25ENEAXTR-ND
N-Channel 30V 6.4A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP

N-Channel 30V 6.4A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMN25ENEAX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMN25ENEAX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMN25ENEAX
MOSFET N-CH 30V 6.4A 6TSOP

MOSFET N-CH 30V 6.4A 6TSOP

Supplier's Site
Mosfet, N-Ch, 30V, 8A, Tsop; Transistor Polarity Nexperia - 03AJ2550 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 8A, Tsop; Transistor Polarity Nexperia
03AJ2550
Mosfet, N-Ch, 30V, 8A, Tsop; Transistor Polarity Nexperia 03AJ2550
MOSFET, N-CH, 30V, 8A, TSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 30V, 8A, TSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMN25ENEAX 1727-PMN25ENEAXCT-ND PMN25ENEAX 03AJ2550
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 8A, Tsop; Transistor Polarity Nexperia
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 6400 milliamps 8000 milliamps
VGS(off) 20 volts
PD 667 milliwatts
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