Nexperia B.V. 30 V, N-channel Trench MOSFET PMH550UNEAH

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 30 V, N-channel Trench MOSFET - PMH550UNEAH - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMH550UNEAHTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMH550UNEAHCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PMH550UNEAHDKR-ND - DigiKey
    DigiKey
Request a Quote
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology, measuring 0.62 x 0.62 x 0.37 mm. It has a drain-source voltage rating of 30 V, a gate-source voltage rating of ±8 V, and a continuous drain current of 770 mA at 25 °C with a 1 cm² drain pad. The on-state resistance is 550 to 670 mΩ at VGS = 4.5 V and ID = 770 mA. It offers ESD protection exceeding 2 kV HBM and is AEC-Q101 qualified.

Datasheet Summary
Powered by GS/AI

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology, measuring 0.62 x 0.62 x 0.37 mm. It has a drain-source voltage rating of 30 V, a gate-source voltage rating of ±8 V, and a continuous drain current of 770 mA at 25 °C with a 1 cm² drain pad. The on-state resistance is 550 to 670 mΩ at VGS = 4.5 V and ID = 770 mA. It offers ESD protection exceeding 2 kV HBM and is AEC-Q101 qualified.

Suppliers

Company
Product
Description
Supplier Links
30 V, N-channel Trench MOSFET - PMH550UNEAH - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, N-channel Trench MOSFET
PMH550UNEAH
30 V, N-channel Trench MOSFET PMH550UNEAH
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM
  • Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMH550UNEAHTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH550UNEAHTR-ND
Single FETs, MOSFETs 1727-PMH550UNEAHTR-ND
PMH550UNEA/SOT8001/D FN0606-3

PMH550UNEA/SOT8001/DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMH550UNEAHCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH550UNEAHCT-ND
Single FETs, MOSFETs 1727-PMH550UNEAHCT-ND
PMH550UNEA/SOT8001/D FN0606-3

PMH550UNEA/SOT8001/DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PMH550UNEAHDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMH550UNEAHDKR-ND
Single FETs, MOSFETs 1727-PMH550UNEAHDKR-ND
PMH550UNEA/SOT8001/D FN0606-3

PMH550UNEA/SOT8001/DFN0606-3

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number PMH550UNEAH 1727-PMH550UNEAHTR-ND
Product Name 30 V, N-channel Trench MOSFET Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 770000 milliamps
VGS(off) 8 volts
PD 380 milliwatts
Unlock Full Specs
to access all available technical data