PNP high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted package, rated for a collector-emitter voltage of -100 V and a continuous collector current of -10 A, with a peak collector current of -20 A. The device has a maximum junction temperature of 175 °C and is AEC-Q101 qualified. Power dissipation reaches 25 W when mounted to the base, and thermal resistance from junction to mounting base is 6 K/W. It is suitable for power management, load switching, and motor drive applications.
Bipolar (BJT) Single Transistor, PNP, -100 V, 90 MHz, 1.5 W, -10 A, 10 RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 68Y7802 |
| Product Name | Bipolar (Bjt) Single Transistor, Pnp, -100 V, 90 Mhz, 1.5 W, -10 A, 10 Rohs Compliant Nexperia |
| Polarity | PNP |
