Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
Applications
N-Channel TrenchMOS FET, 4-Pin, Standard Level Product overview: PHT6NQ10T,135 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PHT6NQ10T,135 can be used for catalog matching and distributor lookup.
N-Channel 100V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SOT-223
N-Channel 100V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SOT-223
N-Channel 100V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SOT-223
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087846-PHT6NQ10T,13
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 633pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 90 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): PHT6NQ10T; PHT6NQ10TT; PHT6NQ10T T/R; PHT6NQ10T,135;
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 3A SOT223
POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 100V, 0.09OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-223 SC-73. FREE 2 YEAR RADWELL WARRANTY
MOSFET Transistor, N Channel, 3 A, 100 V, 90 mohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET N-CH 100V 3A SOT223
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | ODG (Origin Data Global) | Radwell International | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PHT6NQ10T,135 | 278-PHT6NQ10T,135 | 1727-PHT6NQ10T,135CT-ND | 1087846-PHT6NQ10T,135 | 509576 | PHT6NQ10T,135 | 32314354 | 34R4505 | PHT6NQ10T,135 |
| Product Name | N-channel TrenchMOS standard level FET | N-Channel MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PHT6NQ10T,135 | MOSFETs | Single FETs, MOSFETs | Transistor | Mosfet Transistor, N Channel, 3 A, 100 V, 90 Mohm, 10 V, 3 V Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT223; SOT223 SOT223 | SOT223; TO-261-4, TO-261AA | SOT3; SOT-223 | SOT223; Sot-223 (sc-73) | SOT223; TO-261-4, TO-261AA | TO-3 | TO-261-4, TO-261AA | ||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 100 volts | 100 volts | |||||||
| PD | 1800 to 8300 milliwatts | 1800 milliwatts | |||||||
| TJ | -65 to 150 C (-85 to 302 F) | -65 to 150 C (-85 to 302 F) |
