Nexperia B.V. 20 V, P-channel Trench MOSFET PMN25ENEX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
  • 20 V, P-channel Trench MOSFET - PMN25ENEX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PMN25ENEXTR-ND - DigiKey
    DigiKey
  • PMN25ENEX - Rochester Electronics
    Rochester Electronics
  • Mosfet, N-Ch, 30V, 8A, Sot-457-6; Transistor Polarity Nexperia - 65AC3934 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMN25ENEX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMN25ENEX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMN25ENEX
20 V, P-channel Trench MOSFET PMN25ENEX
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified Applications Relay driver High-speed line driver High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Fast switching
  • Trench MOSFET technology
  • 2 kV ESD protection
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PMN25ENEXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PMN25ENEXTR-ND
Single FETs, MOSFETs 1727-PMN25ENEXTR-ND
N-Channel 30V 6.1A (Ta) 560mW (Ta), 6.25mW (Tc) Surface Mount 6-TSOP

N-Channel 30V 6.1A (Ta) 560mW (Ta), 6.25mW (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
- PMN25ENEX - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PMN25ENEX
PMN25ENEX
PMN25ENE - 30 V, N-channel Trench MOSFET

PMN25ENE - 30 V, N-channel Trench MOSFET

Supplier's Site Datasheet
Mosfet, N-Ch, 30V, 8A, Sot-457-6; Transistor Polarity Nexperia - 65AC3934 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 8A, Sot-457-6; Transistor Polarity Nexperia
65AC3934
Mosfet, N-Ch, 30V, 8A, Sot-457-6; Transistor Polarity Nexperia 65AC3934
MOSFET, N-CH, 30V, 8A, SOT-457-6; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 8A, SOT-457-6; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMN25ENEX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMN25ENEX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMN25ENEX
MOSFET N-CH 30V 6.1A 6TSOP

MOSFET N-CH 30V 6.1A 6TSOP

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMN25ENEX 1727-PMN25ENEXTR-ND PMN25ENEX 65AC3934 PMN25ENEX
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs Mosfet, N-Ch, 30V, 8A, Sot-457-6; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 8000 milliamps 8000 milliamps
VGS(off) 20 volts
PD 560 milliwatts
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