P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMN25ENE - 30 V, N-channel Trench MOSFET
N-Channel 30V 6.1A (Ta) 560mW (Ta), 6.25mW (Tc) Surface Mount 6-TSOP
MOSFET, N-CH, 30V, 8A, SOT-457-6; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
MOSFET N-CH 30V 6.1A 6TSOP
| Nexperia B.V. | Rochester Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMN25ENEX | PMN25ENEX | 1727-PMN25ENEXTR-ND | 65AC3934 | PMN25ENEX |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 8A, Sot-457-6; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 30 volts | ||||
| IDSS | 8000 milliamps | 8000 milliamps | |||
| VGS(off) | 20 volts | ||||
| PD | 560 milliwatts |
