Nexperia B.V. 60 V, 6 A PNP high power bipolar transistor PHPT60606PYX

Description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement
Request a Quote Datasheet
Description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 6 A PNP high power bipolar transistor - PHPT60606PYX - Nexperia B.V.
Nijmegen, Netherlands
60 V, 6 A PNP high power bipolar transistor
PHPT60606PYX
60 V, 6 A PNP high power bipolar transistor PHPT60606PYX
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

NPN complement: PHPT60606NY.

Features and benefits

  • High thermal power dissipation capability
  • Suitable for high temperature applications up to 175 °C
  • Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
  • High energy efficiency due to less heat generation
  • AEC-Q101 qualified

Applications

  • Power management
  • Load switch
  • Linear mode voltage regulator
  • Backlighting applications
  • Motor drive
  • Relay replacement
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1084736-PHPT60606PYX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1084736-PHPT60606PYX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1084736-PHPT60606PYX
Win Source Part Number: 1084736-PHPT60606PYX Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel Standard Package: 1,500 Mounting: SMD (SMT) Power - Max: 1.35 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 6 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 525mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 110MHz Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8 Temperature Range - Operating: 175°C (TJ) Alternative Parts (Cross-Reference): DZT851-13; ZXTN2010GTA; DXT2010P5-13; 2SA2097(TE16L1,NQ); 2SA2039-TL-H; CPH3239-TL-E93406857 3115; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: Nexperia USA Inc. Other Names: 1727-2264-1,1727-226 4-2,568-12550-2,9340 68573115,568-12550-1 ,568-12550-2-ND,1727 -2264-6,568-12550-6, 568-12550-1-ND,568-1 2550-6-ND Base Product Number: PHPT60606

Win Source Part Number: 1084736-PHPT60606PYX
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 6 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 525mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Temperature Range - Operating: 175°C (TJ)
Alternative Parts (Cross-Reference): DZT851-13; ZXTN2010GTA; DXT2010P5-13; 2SA2097(TE16L1,NQ); 2SA2039-TL-H; CPH3239-TL-E934068573115;
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Nexperia USA Inc.
Other Names: 1727-2264-1,1727-2264-2,568-12550-2,934068573115,568-12550-1,568-12550-2-ND,1727-2264-6,568-12550-6,568-12550-1-ND,568-12550-6-ND
Base Product Number: PHPT60606

Buy Now Datasheet
Singapore
60 V 6 A SOIC Bipolar Transistor
276-PHPT60606PYX
60 V 6 A SOIC Bipolar Transistor 276-PHPT60606PYX
PHPT60606PY - 60 V, 6 A PNP high power bipolar transistor SOIC 4-Pin Product overview: PHPT60606PYX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 6 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 6 A, SOIC, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PHPT60606PYX can be used for catalog matching and distributor lookup.

PHPT60606PY - 60 V, 6 A PNP high power bipolar transistor SOIC 4-Pin Product overview: PHPT60606PYX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 6 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 6 A, SOIC, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PHPT60606PYX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - PHPT60606PYX - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PHPT60606PYX
Single Bipolar Transistors PHPT60606PYX
NEXPERIA PHPT60606PY - 60 V, 6 A

NEXPERIA PHPT60606PY - 60 V, 6 A

Supplier's Site
Single Bipolar Transistors - 1727-PHPT60606PYXCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PHPT60606PYXCT-ND
Single Bipolar Transistors 1727-PHPT60606PYXCT-ND
Bipolar (BJT) Transistor PNP 60V 6A 110MHz 1.35W Surface Mount LFPAK56, Power-SO8

Bipolar (BJT) Transistor PNP 60V 6A 110MHz 1.35W Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single Bipolar Transistors - 1727-PHPT60606PYXTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PHPT60606PYXTR-ND
Single Bipolar Transistors 1727-PHPT60606PYXTR-ND
Bipolar (BJT) Transistor PNP 60V 6A 110MHz 1.35W Surface Mount LFPAK56, Power-SO8

Bipolar (BJT) Transistor PNP 60V 6A 110MHz 1.35W Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Single Bipolar Transistors - 1727-PHPT60606PYXDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PHPT60606PYXDKR-ND
Single Bipolar Transistors 1727-PHPT60606PYXDKR-ND
Bipolar (BJT) Transistor PNP 60V 6A 110MHz 1.35W Surface Mount LFPAK56, Power-SO8

Bipolar (BJT) Transistor PNP 60V 6A 110MHz 1.35W Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PHPT60606PYX
Bipolar Transistors - BJT PHPT60606PYX
Bipolar Transistors - BJT 60V 6A PNP high pwr bipolar transistor

Bipolar Transistors - BJT 60V 6A PNP high pwr bipolar transistor

Buy Now Datasheet
Bipolar (Bjt) Single Transistor, Pnp, -60 V, 110 Mhz, 1.35 W, -6 A, 20 Rohs Compliant Nexperia - 68Y7791 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Pnp, -60 V, 110 Mhz, 1.35 W, -6 A, 20 Rohs Compliant Nexperia
68Y7791
Bipolar (Bjt) Single Transistor, Pnp, -60 V, 110 Mhz, 1.35 W, -6 A, 20 Rohs Compliant Nexperia 68Y7791
Bipolar (BJT) Single Transistor, PNP, -60 V, 110 MHz, 1.35 W, -6 A, 20 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, PNP, -60 V, 110 MHz, 1.35 W, -6 A, 20 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PHPT60606PYX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PHPT60606PYX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PHPT60606PYX
TRANS PNP 60V 6A LFPAK56 PWRSO8

TRANS PNP 60V 6A LFPAK56 PWRSO8

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Power Bipolar Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PHPT60606PYX 1084736-PHPT60606PYX 276-PHPT60606PYX PHPT60606PYX 1727-PHPT60606PYXCT-ND PHPT60606PYX 68Y7791 PHPT60606PYX
Product Name 60 V, 6 A PNP high power bipolar transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 60 V 6 A SOIC Bipolar Transistor Single Bipolar Transistors Single Bipolar Transistors Bipolar Transistors - BJT Bipolar (Bjt) Single Transistor, Pnp, -60 V, 110 Mhz, 1.35 W, -6 A, 20 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP PNP PNP
Transistor Grade / Operating Range Automotive Automotive
hfe 120
VCEO -60 volts 60 volts 60 volts
IC(max) -6000 milliamps 6000 milliamps 6000 milliamps 6000 milliamps
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