PNP high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted plastic package, rated for a collector-emitter voltage of -60 V and a continuous collector current of -6 A, with a peak pulsed collector current of -12 A. The device supports a maximum junction temperature of 175 °C and a maximum power dissipation of 25 W when mounted base-down. Collector-emitter saturation resistance is 66 to 88 mΩ at -6 A collector current and -600 mA base current. Applications include power management, load switching, voltage regulation, backlighting, motor drive, and relay replacement. NPN complement is PHPT60606NY.
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT60606NY.
Features and benefits
Applications
Win Source Part Number: 1084736-PHPT60606PYX
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Power - Max: 1.35 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 6 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 525mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Temperature Range - Operating: 175°C (TJ)
Alternative Parts (Cross-Reference): DZT851-13; ZXTN2010GTA; DXT2010P5-13; 2SA2097(TE16L1,NQ); 2SA2039-TL-H; CPH3239-TL-E93406857
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Nexperia USA Inc.
Other Names: 1727-2264-1,1727-226
Base Product Number: PHPT60606
Bipolar (BJT) Transistor PNP 60V 6A 110MHz 1.35W Surface Mount LFPAK56, Power-SO8
Bipolar (BJT) Transistor PNP 60V 6A 110MHz 1.35W Surface Mount LFPAK56, Power-SO8
Bipolar (BJT) Transistor PNP 60V 6A 110MHz 1.35W Surface Mount LFPAK56, Power-SO8
PHPT60606PY - 60 V, 6 A PNP high power bipolar transistor SOIC 4-Pin Product overview: PHPT60606PYX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 6 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 6 A, SOIC, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PHPT60606PYX can be used for catalog matching and distributor lookup.
Bipolar (BJT) Single Transistor, PNP, -60 V, 110 MHz, 1.35 W, -6 A, 20 RoHS Compliant: Yes
NEXPERIA PHPT60606PY - 60 V, 6 A
TRANS PNP 60V 6A LFPAK56 PWRSO8
Bipolar Transistors - BJT 60V 6A PNP high pwr bipolar transistor
| Nexperia B.V. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power Bipolar Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PHPT60606PYX | 1084736-PHPT60606PYX | 1727-PHPT60606PYXCT-ND | 276-PHPT60606PYX | 68Y7791 | PHPT60606PYX | PHPT60606PYX | PHPT60606PYX |
| Product Name | 60 V, 6 A PNP high power bipolar transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Single Bipolar Transistors | 60 V 6 A SOIC Bipolar Transistor | Bipolar (Bjt) Single Transistor, Pnp, -60 V, 110 Mhz, 1.35 W, -6 A, 20 Rohs Compliant Nexperia | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT |
| VCEO | -60 volts | 60 volts | 60 volts | |||||
| IC(max) | -6 milliamps | 6000 milliamps | 6000 milliamps | 6000 milliamps | ||||
| PD | 1.35 milliwatts | |||||||
| TJ | 175 C (347 F) | 175 C (347 F) | 175 C (347 F) | |||||
| Package Type | SOT669 SOT669 | SOT3 | SC-100, SOT-669 | TO-3 | SC-100, SOT-669 | LFPAK56, Power-SO8 |
