Nexperia B.V. 12 V, P-channel Trench MOSFET PMCM6501VPEF

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits
  • 12 V, P-channel Trench MOSFET - PMCM6501VPEF - Nexperia B.V.
    Nexperia B.V.
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Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits
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12 V, P-channel Trench MOSFET - PMCM6501VPEF - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
12 V, P-channel Trench MOSFET
PMCM6501VPEF
12 V, P-channel Trench MOSFET PMCM6501VPEF
P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package: 0.98 × 1.48 × 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Ultra small package: 0.98 × 1.48 × 0.35 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Battery switch
  • High-speed line driver
  • Low-side loadswitch
  • Switching circuits
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMCM6501VPEF
Product Name 12 V, P-channel Trench MOSFET
Polarity P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -12 volts
IDSS -8200 milliamps
VGS(off) -0.6000 volts
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