Nexperia B.V. 30 V, P-channel Trench MOSFET PMN70EPEH

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipation capability of 1.4 W ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
  • 30 V, P-channel Trench MOSFET - PMN70EPEH - Nexperia B.V.
    Nexperia B.V.
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Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipation capability of 1.4 W ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
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30 V, P-channel Trench MOSFET - PMN70EPEH - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, P-channel Trench MOSFET
PMN70EPEH
30 V, P-channel Trench MOSFET PMN70EPEH
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipation capability of 1.4 W ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Relay driver High-speed line driver High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Logic-level compatible
  • Very fast switching
  • Enhanced power dissipation capability of 1.4 W
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Relay driver
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMN70EPEH
Product Name 30 V, P-channel Trench MOSFET
Polarity P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -30 volts
IDSS -4400 milliamps
VGS(off) -2 volts
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