Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 surface-mounted plastic package measuring 1.6 mm x 1.2 mm x 0.55 mm, using Trench MOSFET technology. Each transistor has a drain-source voltage rating of 20 V, a continuous drain current of 800 mA at 25 °C, and a drain-source on-state resistance of 290 mΩ to 380 mΩ at 4.5 V gate-source voltage. ESD protection is rated up to 2 kV HBM. The device is not automotive qualified.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Mosfet Array 2 N-Channel (Dual) 20V 800mA (Ta) 500mW (Ta) Surface Mount SOT-666
MOSFET 2N-CH 20V 0.8A SOT666
MOSFET 2N-CH 20V 0.8A SOT666
MOSFET 2N-CH 20V 0.8A SOT666
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMDT290UNEYL | 1727-PMDT290UNEYLTR-ND | PMDT290UNEYL | PMDT290UNEYL |
| Product Name | 20 V, 800 mA dual N-channel Trench MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 20 volts | |||
| IDSS | 800000 milliamps | |||
| VGS(off) | 8 volts | |||
| PD | 330 milliwatts |
