N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It has a drain-source voltage rating of 30 V, a gate-source voltage range of ±20 V, and a continuous drain current of 6.4 A at 25 °C with a 6 cm² drain pad. The junction temperature ranges from -55 °C to 175 °C, with a total power dissipation of 667 mW at 25 °C and a peak drain current of 25 A for single pulses. ESD protection exceeds 2 kV HBM (class H2). Logic-level compatible with applications in relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 6.4A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 30V 6.4A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 30V 6.4A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
MOSFET N-CH 30V 6.4A 6TSOP
MOSFET, N-CH, 30V, 6.4A, TSOP ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMN15ENEX | 1727-PMN15ENEXDKR-ND | PMN15ENEX | 26AK2754 |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 6.4A, Tsop Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 30 volts | |||
| IDSS | 6400 milliamps | |||
| VGS(off) | 20 volts | |||
| PD | 667 milliwatts |
