N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 100V 1.2A 6TSOP
Win Source Part Number: 1354312-PMN280ENEAX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Base Product Number: PMN280
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
Power Dissipation (Max): 667mW (Ta), 7.5W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
N-Channel 100V 1.2A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 100V 1.2A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 100V 1.2A (Ta) 667mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
MOSFET, N-CH, 100V, 1.2A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.285ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 1.2A 6TSOP
| Nexperia B.V. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMN280ENEAX | PMN280ENEAX | 1354312-PMN280ENEAX | 1727-8662-6-ND | 07AH4514 | PMN280ENEAX | PMN280ENEAX |
| Product Name | 100 V, N-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 1.2A, Tsop-6; Transistor Polarity Nexperia | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 1200 milliamps | 1200 milliamps | 1200 milliamps | ||||
| VGS(off) | 1.7 volts |
