Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET 2N-CH 30V 3.1A DFN2020D-6
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089510-PMDPB56XNEAX
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DFN2020D-6
Maximum Power Dissipation: 485mW (Ta)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.1A (Ta)
Gate-Source Threshold Voltage: 1.25V @ 250μA
Max Gate Charge: 5nC @ 4.5V
Max Input Capacitance: 256pF @ 15V
Maximum Rds On at Id,Vgs: 72 mOhm @ 3.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) 30V 3.1A (Ta) 485mW (Ta) Surface Mount DFN2020D-6
Mosfet Array 2 N-Channel (Dual) 30V 3.1A (Ta) 485mW (Ta) Surface Mount DFN2020D-6
Mosfet Array 2 N-Channel (Dual) 30V 3.1A (Ta) 485mW (Ta) Surface Mount DFN2020D-6
PMDPB56XNEA - 30 V, dual N-channel Trench MOSFET Product overview: PMDPB56XNEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 30 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30 V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PMDPB56XNEAX can be used for catalog matching and distributor lookup.
MOSFET PMDPB56XNEA/HUSON6/R
MOSFET, DUAL N-CH, 30V, 3.1A, DFN2020D ROHS COMPLIANT: YES
MOSFET 2N-CH 30V 3.1A 6DFN
| Nexperia B.V. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMDPB56XNEAX | PMDPB56XNEAX | 1089510-PMDPB56XNEAX | 1727-2690-6-ND | 289-PMDPB56XNEAX | PMDPB56XNEAX | 74AH1121 | PMDPB56XNEAX |
| Product Name | 30 V, dual N-channel Trench MOSFET | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMDPB56XNEAX | FET, MOSFET Arrays | N-Channel Dual 30 V MOSFET Transistor | MOSFET | Mosfet, Dual N-Ch, 30V, 3.1A, Dfn2020D Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| IDSS | 3100 milliamps | 3100 milliamps | ||||||
| VGS(off) | 1 volts |
