Nexperia B.V. 30 V, dual N-channel Trench MOSFET PMDPB95XNE2X

Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent thermal conduction EletroStatic Discharge (ESD) protection > 2 kV HBM Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disk and computing power management
  • 30 V, dual N-channel Trench MOSFET - PMDPB95XNE2X - Nexperia B.V.
    Nexperia B.V.
  • FET, MOSFET Arrays - 1727-PMDPB95XNE2XCT-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDPB95XNE2XTR-ND - DigiKey
    DigiKey
  • FET, MOSFET Arrays - 1727-PMDPB95XNE2XDKR-ND - DigiKey
    DigiKey
  • PMDPB95XNE2X - Rochester Electronics
    Rochester Electronics
Request a Quote Datasheet
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent thermal conduction EletroStatic Discharge (ESD) protection > 2 kV HBM Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disk and computing power management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, dual N-channel Trench MOSFET - PMDPB95XNE2X - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, dual N-channel Trench MOSFET
PMDPB95XNE2X
30 V, dual N-channel Trench MOSFET PMDPB95XNE2X
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very fast switching Trench MOSFET technology Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent thermal conduction EletroStatic Discharge (ESD) protection > 2 kV HBM Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disk and computing power management

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Very fast switching
  • Trench MOSFET technology
  • Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • EletroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Small brushless DC motor drive
  • Power management in battery-driven portables
  • Hard disk and computing power management
Supplier's Site Datasheet
FET, MOSFET Arrays - 1727-PMDPB95XNE2XCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB95XNE2XCT-ND
FET, MOSFET Arrays 1727-PMDPB95XNE2XCT-ND
Mosfet Array 2 N-Channel (Dual) 30V 2.7A (Ta) 510mW (Ta) Surface Mount 6-HUSON (2x2)

Mosfet Array 2 N-Channel (Dual) 30V 2.7A (Ta) 510mW (Ta) Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDPB95XNE2XTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB95XNE2XTR-ND
FET, MOSFET Arrays 1727-PMDPB95XNE2XTR-ND
Mosfet Array 2 N-Channel (Dual) 30V 2.7A (Ta) 510mW (Ta) Surface Mount 6-HUSON (2x2)

Mosfet Array 2 N-Channel (Dual) 30V 2.7A (Ta) 510mW (Ta) Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
FET, MOSFET Arrays - 1727-PMDPB95XNE2XDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1727-PMDPB95XNE2XDKR-ND
FET, MOSFET Arrays 1727-PMDPB95XNE2XDKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 2.7A (Ta) 510mW (Ta) Surface Mount 6-HUSON (2x2)

Mosfet Array 2 N-Channel (Dual) 30V 2.7A (Ta) 510mW (Ta) Surface Mount 6-HUSON (2x2)

Buy Now Datasheet
- PMDPB95XNE2X - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PMDPB95XNE2X
PMDPB95XNE2X
PMDPB95XNE2 - 30 V, dual N-channel Trench MOSFET

PMDPB95XNE2 - 30 V, dual N-channel Trench MOSFET

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMDPB95XNE2X
MOSFET PMDPB95XNE2X
MOSFET PMDPB95XNE2/HUSON6/R EEL 7" Q1/

MOSFET PMDPB95XNE2/HUSON6/REEL 7" Q1/

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMDPB95XNE2X 1727-PMDPB95XNE2XCT-ND PMDPB95XNE2X PMDPB95XNE2X
Product Name 30 V, dual N-channel Trench MOSFET FET, MOSFET Arrays MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS 30 volts
IDSS 3000 milliamps
VGS(off) 12 volts
PD 510 milliwatts
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