Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
Features and benefits
Applications
Mosfet Array 2 N-Channel (Dual) 60V 490mA 410mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 60V 490mA 410mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 60V 490mA 410mW Surface Mount 6-TSSOP
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089680-PMGD780SN,11
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSSOP
Maximum Power Dissipation: 410mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 490mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 1.05nC @ 10V
Max Input Capacitance: 23pF @ 30V
Maximum Rds On at Id,Vgs: 920 mOhm @ 300mA, 10V
Alternative Parts (Cross-Reference): PMGD780SN;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
PMGD780SN - Dual N-channel TrenchMOS standard level FET TSSOP 6-Pin Product overview: PMGD780SN,115 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, TSSOP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, TSSOP, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PMGD780SN,115 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 60V 0.49A 6TSSOP
MOSFET 2N-CH 60V 0.49A 6TSSOP
MOSFET, N-CH, 60V, 0.49A, 150DEGC, 0.41W; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:490mA; On Resistance Rds(on):0.78ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
NEXPERIA - PMGD780SN,115 - Dual-MOSFET, Zweifach n-Kanal, 300 mA, 60 V, 0.78 ohm, 10 V, 2 V
| Nexperia B.V. | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMGD780SN,115 | 1727-3127-2-ND | 1089680-PMGD780SN,115 | 289-PMGD780SN,115 | PMGD780SN,115 | PMGD780SN,115 | 34R4574 | 554-PMGD780SN,115 |
| Product Name | Dual N-channel TrenchMOS standard level FET | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMGD780SN,115 | N-Channel Dual TSSOP MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | Mosfet, N-Ch, 60V, 0.49A, 150Degc, 0.41W; Transistor Polarity Nexperia | NEXPERIA - PMGD780SN,115 - Dual-MOSFET, Zweifach n-Kanal, 300 mA, 60 V, 0.78 ohm, 10 V, 2 V |
| Package Type | SOT363 | 6-TSSOP, SC-88, SOT-363 | SOT3; 6-TSSOP | 6-TSSOP, SC-88, SOT-363 | TO-3 | |||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 410 milliwatts | 410 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
