P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology, with dimensions of 0.78 x 0.78 x 0.35 mm. It has a drain-source voltage rating of -20 V, a gate-source voltage range of -8 to 8 V, and a continuous drain current of -3.3 A at 25 ⁰C with V₃S = -4.5 V. The on-state resistance is 65 to 80 mΩ at V₃S = -4.5 V and I₃ = -3 A, with a total power dissipation of 400 mW at 25 ⁰C. The device provides ESD protection exceeding 2 kV HBM and operates with a junction temperature range of -55 to 150 ⁰C.
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Features and benefits
Applications
P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)
P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)
P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)
MOSFET, P-CH, -20V, -4.2A, WLCSP; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power RoHS Compliant: Yes
MOSFET P-CH 20V 4WLCSP
| Nexperia B.V. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMCM4402UPEZ | 1727-7625-2-ND | PMCM4402UPEZ | 50AC6561 | PMCM4402UPEZ |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -20V, -4.2A, Wlcsp; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | -20 volts | ||||
| IDSS | -4200 milliamps | -4200 milliamps | |||
| VGS(off) | 8 volts | ||||
| PD | 400 milliwatts |
