Nexperia B.V. 20 V, P-channel Trench MOSFET PMCM4402UPEZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits
  • 20 V, P-channel Trench MOSFET - PMCM4402UPEZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-7625-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-7625-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-7625-1-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMCM4402UPEZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P-Ch, -20V, -4.2A, Wlcsp; Transistor Polarity Nexperia - 50AC6561 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMCM4402UPEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMCM4402UPEZ
20 V, P-channel Trench MOSFET PMCM4402UPEZ
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Ultra small package 0.78 x 0.78 x 0.35 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Battery switch
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-7625-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7625-2-ND
Single FETs, MOSFETs 1727-7625-2-ND
P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7625-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7625-6-ND
Single FETs, MOSFETs 1727-7625-6-ND
P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7625-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7625-1-ND
Single FETs, MOSFETs 1727-7625-1-ND
P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMCM4402UPEZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMCM4402UPEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMCM4402UPEZ
MOSFET P-CH 20V 4WLCSP

MOSFET P-CH 20V 4WLCSP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMCM4402UPEZ
MOSFET PMCM4402UPEZ
MOSFET MOS Discretes WLCSP

MOSFET MOS Discretes WLCSP

Buy Now Datasheet
Mosfet, P-Ch, -20V, -4.2A, Wlcsp; Transistor Polarity Nexperia - 50AC6561 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -4.2A, Wlcsp; Transistor Polarity Nexperia
50AC6561
Mosfet, P-Ch, -20V, -4.2A, Wlcsp; Transistor Polarity Nexperia 50AC6561
MOSFET, P-CH, -20V, -4.2A, WLCSP; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power RoHS Compliant: Yes

MOSFET, P-CH, -20V, -4.2A, WLCSP; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMCM4402UPEZ 1727-7625-2-ND PMCM4402UPEZ PMCM4402UPEZ 50AC6561
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, P-Ch, -20V, -4.2A, Wlcsp; Transistor Polarity Nexperia
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -4200 milliamps -4200 milliamps
VGS(off) 8 volts
PD 400 milliwatts
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