Nexperia B.V. 20 V, P-channel Trench MOSFET PMCM4402UPEZ

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits
  • 20 V, P-channel Trench MOSFET - PMCM4402UPEZ - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-7625-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-7625-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-7625-1-ND - DigiKey
    DigiKey
  • Mosfet, P-Ch, -20V, -4.2A, Wlcsp; Transistor Polarity Nexperia - 50AC6561 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMCM4402UPEZ - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMCM4402UPEZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMCM4402UPEZ
20 V, P-channel Trench MOSFET PMCM4402UPEZ
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Applications Battery switch High-speed line driver High-side loadswitch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Ultra small package 0.78 x 0.78 x 0.35 mm
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • Battery switch
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-7625-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7625-2-ND
Single FETs, MOSFETs 1727-7625-2-ND
P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7625-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7625-6-ND
Single FETs, MOSFETs 1727-7625-6-ND
P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-7625-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-7625-1-ND
Single FETs, MOSFETs 1727-7625-1-ND
P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

P-Channel 20V 4.2A (Tj) 400mW Surface Mount 4-WLCSP (0.78x0.78)

Buy Now Datasheet
Mosfet, P-Ch, -20V, -4.2A, Wlcsp; Transistor Polarity Nexperia - 50AC6561 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -4.2A, Wlcsp; Transistor Polarity Nexperia
50AC6561
Mosfet, P-Ch, -20V, -4.2A, Wlcsp; Transistor Polarity Nexperia 50AC6561
MOSFET, P-CH, -20V, -4.2A, WLCSP; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power RoHS Compliant: Yes

MOSFET, P-CH, -20V, -4.2A, WLCSP; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMCM4402UPEZ - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMCM4402UPEZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMCM4402UPEZ
MOSFET P-CH 20V 4WLCSP

MOSFET P-CH 20V 4WLCSP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMCM4402UPEZ
MOSFET PMCM4402UPEZ
MOSFET MOS Discretes WLCSP

MOSFET MOS Discretes WLCSP

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PMCM4402UPEZ 1727-7625-2-ND 50AC6561 PMCM4402UPEZ PMCM4402UPEZ
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs Mosfet, P-Ch, -20V, -4.2A, Wlcsp; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts
IDSS -4200 milliamps -4200 milliamps
VGS(off) 8 volts
PD 400 milliwatts
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