N-channel enhancement mode MOSFET in a SOT223 package for surface mounting, designed for DC-DC conversion and general-purpose switching. It has a drain-source voltage rating of 55 V, a continuous drain current of 2.5 A at ambient temperature, and a maximum on-state resistance of 150 mΩ at VₓS = 5 V. The gate threshold voltage ranges from 1.0 V to 2.0 V. The device includes integral zener diodes for ESD protection and meets the Absolute Maximum Rating System (IEC 134).
MOSFET Transistor, N Channel, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26M1951 |
| Product Name | Mosfet Transistor, N Channel, 2.5 A, 55 V, 150 Mohm, 5 V, 1.5 V Rohs Compliant Nexperia |
| Polarity | N-Channel |