P-channel enhancement mode MOSFET in a SOT363 (TSSOP6) surface-mounted plastic package, rated for a drain-source voltage of -20 V and a continuous drain current of -2 A at 25°C with a drain mounting pad of 6 cm². It features a typical drain-source on-state resistance of 90 mΩ at -4.5 V gate-source voltage and a gate-source threshold voltage range of -0.65 V to -1.15 V. The device supports peak drain current up to 8 A for pulses ≤10 µs and has a maximum junction temperature of 150°C. The part is suited for applications including relay drivers, high-side load switches, and switching circuits. Device is not explicitly qualified for automotive applications.
P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET P-CH 20V 2A 6TSSOP
MOSFET P-CH 20V 2A 6TSSOP
P-Channel 20V 2A (Tj) 375mW (Ta), 2.4W (Tc) Surface Mount 6-TSSOP
MOSFET P-CH 20V 2A 6TSSOP
MOSFET 20 V, 2 A P-channel Trench MOSFET
NEXPERIA PMG85XP - SMALL SIGNAL
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Bipolar RF Transistors |
| Product Number | PMG85XPH | 1727-PMG85XPHDKR-ND | PMG85XPH | PMG85XPH | PMG85XPH |
| Product Name | 20 V, 2 A P-channel Trench MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single Bipolar Transistors |
| MOSFET Operating Mode | Enhancement | ||||
| Package Type | SOT363-3 SOT363-3 | 6-TSSOP, SC-88, SOT-363 | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| Polarity | P-Channel | P-Channel | |||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
