P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET P-CH 30V 4.6A 6TSOP
MOSFET P-CH 30V 4.6A 6TSOP
P-Channel 30V 4.6A (Ta) 560mW (Ta), 6.25mW (Tc) Surface Mount 6-TSOP
PMN50EPE - 30 V, P-channel Trench MOSFET
MOSFET, P-CH, -30V, -6A, SOT-457-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power RoHS Compliant: Yes
MOSFET P-CH 30V 4.6A 6TSOP
MOSFET P-CH 30V 4.6A 6TSOP
| Nexperia B.V. | DigiKey | Rochester Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMN50EPEX | 1727-PMN50EPEXDKR-ND | PMN50EPEX | 65AC3936 | PMN50EPEX | PMN50EPEX |
| Product Name | 30 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Mosfet, P-Ch, -30V, -6A, Sot-457-6; Transistor Polarity Nexperia | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | -30 volts | 30 volts | ||||
| IDSS | -6000 milliamps | -6000 milliamps | 4600 milliamps | |||
| VGS(off) | 20 volts | |||||
| PD | 560 milliwatts | 560 milliwatts |
