PNP high power bipolar transistor in a SOT669 (LFPAK56) surface-mounted power plastic package, rated for 100 V collector-emitter voltage and 10 A continuous collector current. Peak collector current is 20 A for pulses up to 1 ms. Collector-emitter saturation resistance is 53 to 80 mΩ at -10 A collector current and -1 A base current. Junction temperature rating is 175 °C, with ambient temperature operation from -55 °C to 175 °C. Qualified to AEC-Q101 for automotive applications.
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT61010NY-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Power Bipolar Transistors |
| Product Number | PHPT61010PY-QX |
| Product Name | 100 V, 10 A PNP high power bipolar transistor |
| VCEO | -100 volts |
