N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
PMN120ENEA - 60 V, N-channel Trench MOSFET TSOP 6-Pin Product overview: PMN120ENEAX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMN120ENEAX can be used for catalog matching and distributor lookup.
Win Source Part Number: 1354546-PMN120ENEAX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Base Product Number: PMN120
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 30 V
Power Dissipation (Max): 670mW (Ta), 7.5W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
N-Channel 60V 2.5A (Ta) 670mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 60V 2.5A (Ta) 670mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
N-Channel 60V 2.5A (Ta) 670mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP
MOSFET N-CH 60V 2.5A 6TSOP
MOSFET N-CH 60V 2.5A 6TSOP
MOSFET, N-CH, 60V, 3.1A, TSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power DissipationRoHS Compliant: Yes
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMN120ENEAX | 278-PMN120ENEAX | 1354546-PMN120ENEAX | 1727-PMN120ENEAXDKR-ND | PMN120ENEAX | PMN120ENEAX | 03AJ2547 | PMN120ENEAX |
| Product Name | 60 V, N-channel Trench MOSFET | N-Channel 60 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 3.1A, Tsop; Transistor Polarity Nexperia | MOSFET |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 2500 milliamps | 2500 milliamps | 3100 milliamps | |||||
| VGS(off) | 20 volts | |||||||
| PD | 670 milliwatts | 670 to 7500 milliwatts | 670 milliwatts |
