N-channel enhancement mode field-effect transistor using TrenchMOS technology in a SOT23 surface-mount package, measuring 2.8 to 3.0 mm in length, 1.2 to 1.4 mm in width, and 0.9 to 1.1 mm in height. It has a drain-source voltage rating of 60 V, a continuous drain current of 300 mA at 25°C, and a total power dissipation of 0.83 W. The device exhibits a drain-source on-state resistance of 2.8 to 5.3 Ω depending on gate-source voltage and temperature, with a gate-source threshold voltage ranging from 0.6 to 3.5 V across operating temperatures. Junction temperature operates from -65°C to +150°C. The part meets IEC 60134 for absolute maximum ratings and is qualified for automotive, industrial, computing, consumer, and wearable applications.
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
Applications
N-Channel 60V 300mA (Ta) 830mW (Tc) Surface Mount TO-236AB
N-Channel 60V 300mA (Ta) 830mW (Tc) Surface Mount TO-236AB
N-Channel 60V 300mA (Ta) 830mW (Tc) Surface Mount TO-236AB
MOSFET N-CH 60V 300MA TO236AB
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors |
| Product Number | PMBF170,235 | 1727-PMBF170,235TR-ND | PMBF170,235 |
| Product Name | N-channel TrenchMOS intermediate level FET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 |
