Nexperia B.V. 100 V, 10 A NPN high power bipolar transistor PHPT61010NYX

Description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement
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Description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement
Request a Quote
Datasheet
Datasheet Summary
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100 V, 10 A NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. Maximum collector current is 10 A, collector-emitter voltage is 100 V, and peak collector current is 20 A for pulses up to 1 ms. Junction temperature rating is up to 175 °C. Thermal resistance from junction to ambient ranges from 30 K/W to 100 K/W depending on PCB mounting. Collector-emitter saturation resistance is 25 to 37 mΩ at 10 A collector current and 1 A base current. PNP complement is PHPT61010PY.

Datasheet Summary
Powered by GS/AI

100 V, 10 A NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. Maximum collector current is 10 A, collector-emitter voltage is 100 V, and peak collector current is 20 A for pulses up to 1 ms. Junction temperature rating is up to 175 °C. Thermal resistance from junction to ambient ranges from 30 K/W to 100 K/W depending on PCB mounting. Collector-emitter saturation resistance is 25 to 37 mΩ at 10 A collector current and 1 A base current. PNP complement is PHPT61010PY.

Suppliers

Company
Product
Description
Supplier Links
100 V, 10 A NPN high power bipolar transistor - PHPT61010NYX - Nexperia B.V.
Nijmegen, Netherlands
100 V, 10 A NPN high power bipolar transistor
PHPT61010NYX
100 V, 10 A NPN high power bipolar transistor PHPT61010NYX
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation Applications Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

PNP complement: PHPT61010PY

Features and benefits

  • High thermal power dissipation capability
  • High temperature applications up to 175 °C
  • Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
  • High energy efficiency due to less heat generation

Applications

  • Power management
  • Load switch
  • Linear mode voltage regulator
  • Backlighting applications
  • Motor drive
  • Relay replacement
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 988176-PHPT61010NYX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
988176-PHPT61010NYX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 988176-PHPT61010NYX
Win Source Part Number: 988176-PHPT61010NYX Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel Standard Package: 1,500 Mounting: SMD (SMT) Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 10 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 370mV @ 1A, 10A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Frequency - Transition: 145MHz Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK56, Power-SO8 Temperature Range - Operating: 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: Nexperia USA Inc. Other Names: 1727-2272-1,568-1255 8-6,1727-2272-2,9340 68585115,1727-2272-6 ,568-12558-6-ND,568- 12558-2,568-12558-1- ND,568-12558-2-ND,56 8-12558-1 Base Product Number: PHPT61010

Win Source Part Number: 988176-PHPT61010NYX
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 10 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 370mV @ 1A, 10A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 145MHz
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK56, Power-SO8
Temperature Range - Operating: 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Nexperia USA Inc.
Other Names: 1727-2272-1,568-12558-6,1727-2272-2,934068585115,1727-2272-6,568-12558-6-ND,568-12558-2,568-12558-1-ND,568-12558-2-ND,568-12558-1
Base Product Number: PHPT61010

Buy Now Datasheet
Single Bipolar Transistors - 1727-2272-1-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
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Single Bipolar Transistors 1727-2272-1-ND
Bipolar (BJT) Transistor NPN 100V 10A 145MHz 1.5W Surface Mount LFPAK56, Power-SO8

Bipolar (BJT) Transistor NPN 100V 10A 145MHz 1.5W Surface Mount LFPAK56, Power-SO8

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Single Bipolar Transistors - 1727-2272-6-ND - DigiKey
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Single Bipolar Transistors
1727-2272-6-ND
Single Bipolar Transistors 1727-2272-6-ND
Bipolar (BJT) Transistor NPN 100V 10A 145MHz 1.5W Surface Mount LFPAK56, Power-SO8

Bipolar (BJT) Transistor NPN 100V 10A 145MHz 1.5W Surface Mount LFPAK56, Power-SO8

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Single Bipolar Transistors - 1727-2272-2-ND - DigiKey
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Single Bipolar Transistors
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Bipolar (BJT) Transistor NPN 100V 10A 145MHz 1.5W Surface Mount LFPAK56, Power-SO8

Bipolar (BJT) Transistor NPN 100V 10A 145MHz 1.5W Surface Mount LFPAK56, Power-SO8

Buy Now Datasheet
Singapore, Singapore
100 V 10 A SOIC Bipolar Transistor
276-PHPT61010NYX
100 V 10 A SOIC Bipolar Transistor 276-PHPT61010NYX
PHPT61010NY - 100 V, 10 A NPN high power bipolar transistor SOIC 4-Pin Product overview: PHPT61010NYX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 V, 10 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 100 V, 10 A, SOIC, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PHPT61010NYX can be used for catalog matching and distributor lookup.

PHPT61010NY - 100 V, 10 A NPN high power bipolar transistor SOIC 4-Pin Product overview: PHPT61010NYX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 V, 10 A, SOIC. Search-friendly keywords include transistor, BJT, switching, amplification, 100 V, 10 A, SOIC, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PHPT61010NYX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PHPT61010NYX
Bipolar Transistors - BJT PHPT61010NYX
Bipolar Transistors - BJT 100V 10A NPN high power bipolar

Bipolar Transistors - BJT 100V 10A NPN high power bipolar

Buy Now Datasheet
Bipolar (Bjt) Single Transistor, Npn, 100 V, 145 Mhz, 1.5 W, 10 A, 25 Rohs Compliant Nexperia - 68Y7801 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 100 V, 145 Mhz, 1.5 W, 10 A, 25 Rohs Compliant Nexperia
68Y7801
Bipolar (Bjt) Single Transistor, Npn, 100 V, 145 Mhz, 1.5 W, 10 A, 25 Rohs Compliant Nexperia 68Y7801
Bipolar (BJT) Single Transistor, NPN, 100 V, 145 MHz, 1.5 W, 10 A, 25 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 100 V, 145 MHz, 1.5 W, 10 A, 25 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PHPT61010NYX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PHPT61010NYX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PHPT61010NYX
TRANS NPN 100V 10A LFPAK56

TRANS NPN 100V 10A LFPAK56

Supplier's Site
Single Bipolar Transistors - PHPT61010NYX - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PHPT61010NYX
Single Bipolar Transistors PHPT61010NYX
TRANS NPN 100V 10A LFPAK56

TRANS NPN 100V 10A LFPAK56

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Power Bipolar Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PHPT61010NYX 988176-PHPT61010NYX 1727-2272-1-ND 276-PHPT61010NYX PHPT61010NYX 68Y7801 PHPT61010NYX PHPT61010NYX
Product Name 100 V, 10 A NPN high power bipolar transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Single Bipolar Transistors 100 V 10 A SOIC Bipolar Transistor Bipolar Transistors - BJT Bipolar (Bjt) Single Transistor, Npn, 100 V, 145 Mhz, 1.5 W, 10 A, 25 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single Bipolar Transistors
VCEO 100 volts 100 volts 100 volts
IC(max) 10 milliamps 10000 milliamps 10000 milliamps 10000 milliamps
PD 1.5 milliwatts
TJ 175 C (347 F) 175 C (347 F) 175 C (347 F)
Package Type SOT669 SOT669 SOT3 SC-100, SOT-669 TO-3 LFPAK56, Power-SO8 SC-100, SOT-669
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