P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET P-CH 20V 530MA DFN0606-3
P-Channel 20V 530mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3
P-Channel 20V 530mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3
P-Channel 20V 530mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3
MOSFET 20 V, P-channel Trench MOSFET
MOSFET P-CH 20V 530MA DFN0606-3
| Nexperia B.V. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | PMH950UPEH | PMH950UPEH | 1727-8581-2-ND | PMH950UPEH | PMH950UPEH |
| Product Name | 20 V, P-channel Trench MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | -20 volts | 20 volts | |||
| IDSS | -530 milliamps | 530 milliamps | |||
| VGS(off) | -0.7000 volts |
