Nexperia B.V. 20 V, P-channel Trench MOSFET PMH950UPEH

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm Applications Relay driver High-speed line driver High-side load switch Switching circuits
  • 20 V, P-channel Trench MOSFET - PMH950UPEH - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-8581-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-8581-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-8581-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - PMH950UPEH - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMH950UPEH - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm Applications Relay driver High-speed line driver High-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, P-channel Trench MOSFET - PMH950UPEH - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
20 V, P-channel Trench MOSFET
PMH950UPEH
20 V, P-channel Trench MOSFET PMH950UPEH
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 1 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm Applications Relay driver High-speed line driver High-side load switch Switching circuits

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM
  • Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-8581-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8581-2-ND
Single FETs, MOSFETs 1727-8581-2-ND
P-Channel 20V 530mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

P-Channel 20V 530mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8581-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8581-6-ND
Single FETs, MOSFETs 1727-8581-6-ND
P-Channel 20V 530mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

P-Channel 20V 530mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8581-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8581-1-ND
Single FETs, MOSFETs 1727-8581-1-ND
P-Channel 20V 530mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

P-Channel 20V 530mA (Ta) 370mW (Ta), 2.2W (Tc) Surface Mount DFN0606-3

Buy Now Datasheet
Single FETs, MOSFETs - PMH950UPEH - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
PMH950UPEH
Single FETs, MOSFETs PMH950UPEH
MOSFET P-CH 20V 530MA DFN0606-3

MOSFET P-CH 20V 530MA DFN0606-3

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
PMH950UPEH
MOSFET PMH950UPEH
MOSFET 20 V, P-channel Trench MOSFET

MOSFET 20 V, P-channel Trench MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PMH950UPEH - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PMH950UPEH
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PMH950UPEH
MOSFET P-CH 20V 530MA DFN0606-3

MOSFET P-CH 20V 530MA DFN0606-3

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number PMH950UPEH 1727-8581-2-ND PMH950UPEH PMH950UPEH PMH950UPEH
Product Name 20 V, P-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS -20 volts 20 volts
IDSS -530 milliamps 530 milliamps
VGS(off) -0.7000 volts
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